X-On Electronics has gained recognition as a prominent supplier of T640N14TOF SCR Modules across the USA, India, Europe, Australia, and various other global locations. T640N14TOF SCR Modules are a product manufactured by Infineon. We provide cost-effective solutions for SCR Modules, ensuring timely deliveries around the world.

T640N14TOF Infineon

T640N14TOF electronic component of Infineon
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Part No. T640N14TOF
Manufacturer: Infineon
Category: SCR Modules
Description: Infineon Technologies SCR Modules Phse Cntrl Thyristrs 640A 1400V
Datasheet: T640N14TOF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 126.808 ea
Line Total: USD 126.81 
Availability - 29
Ship by Tue. 17 Jun to Thu. 19 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
29
Ship by Tue. 17 Jun to Thu. 19 Jun
MOQ : 1
Multiples : 1
1 : USD 126.808
12 : USD 125.488

   
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We are delighted to provide the T640N14TOF from our SCR Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the T640N14TOF and other electronic components in the SCR Modules category and beyond.

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Datenblatt / Data sheet N Netz-Thyristor T640N Phase Control Thyristor Elektrische Eigenschaften / Electrical properties Hchstzulssige Werte / Maximum rated values 1200 1600 V Periodische Vorwrts- und Rckwrts-Spitzensperrspannung T = -40C... T V ,V vj vj max DRM RRM enndaten 1400 1800 V repetitive peak forward off-state and reverse voltages Vorwrts-Stossspitzensperrspannung T = -40C... T V 1200 1600 V Elektrische Eigenschaften vj vj max DSM 1400 1800 V non-repetitive peak forward off-state voltage 1300 1700 V Rckwrts-Stossspitzensperrspannung T = +25C... T V vj vj max RSM 1500 1900 V non-repetitive peak reverse voltage 1250 A Durchlassstrom-Grenzeffektivwert I TRMSM maximum RMS on-state current 644 A Dauergrenzstrom T = 85 C I C TAVM average on-state current 920 A Dauergrenzstrom T = 55 C, = 180sin, t = 10 ms I C P TAVM average on-state current 1450 A Durchlastrom-Effektivwert I TRMS RMS on-state current Stossstrom-Grenzwert T = 25 C, t = 10 ms I 9400 A vj P TSM 8000 A T = T , t = 10 ms surge current vj vj max P 442 10 As Grenzlastintegral T = 25 C, t = 10 ms It vj P 320 10 As It-value T = T , t = 10 ms vj vj max P DIN IEC 60747-6 200 A/s Kritische Stromsteilheit (di /dt) T cr f = 50 Hz, i = 1 A, di /dt = 1 A/s GM G critical rate of rise of on-state current 1000 V/s Kritische Spannungssteilheit T = T , v = 0,67 V (dv /dt) vj vj max D DRM D cr th critical rate of rise of off-state voltage 5.Kennbuchstabe / 5 letter F Charakteristische Werte / Characteristic values Durchlassspannung T = T , i = 2400 A v max. 2,15 V vj vj max T T max. 1,19 V on-state voltage T = T , i = 600 A vj vj max T 0,8V Schleusenspannung T = T V vj vj max (TO) threshold voltage 0,5 m Ersatzwiderstand T = T r vj vj max T slope resistance Durchlasskennlinie 200 A i 3200 A T = T A= 9,775E-01 T vj vj max on-state characteristic B= 2,642E-04 C= -8,379E-02 v = A + B i + C ln(i + 1) + D i T T T T D= 2,424E-02 Zndstrom T = 25 C, v = 12V I max. 250mA vj D GT gate trigger current Zndspannung T = 25 C, v = 12V V max. 2,2V vj D GT gate trigger voltage Nicht zndender Steuerstrom T = T , v = 12V I max. 10 mA vj vj max D GD gate non-trigger current T = T , v = 0,5 V max. 5 mA vj vj max D DRM Nicht zndende Steuerspannung T = T , v = 0,5 V V max. 0,25V vj vj max D DRM GD gate non-trigger voltage Haltestrom T = 25C, v = 12V I max. 300mA vj D H holding current Einraststrom T = 25C, v = 12V, R 10 I max. 1200mA vj D GK L latching current i = 1 A, di /dt = 1 A/s, t = 20 s GM G g Vorwrts- und Rckwrts-Sperrstrom T = T i , i max. 50mA vj vj max D R forward off-state and reverse current v = V , v = V D DRM R RRM Zndverzug DIN IEC 60747-6 t max. 4s gd gate controlled delay time T = 25 C, i = 1 A, di /dt = 1 A/s vj GM G prepared by: H.Sandmann date of publication: 2010-01-13 approved by: M.Leifeld revision: 3.1 IFBIP D AEC / 2010-01-13, H.Sandmann A 01/10 Seite/page 1/10 Datenblatt / Data sheet N Netz-Thyristor T640N Phase Control Thyristor Elektrische Eigenschaften / Electrical properties Charakteristische Werte / Characteristic values typ. 250s Freiwerdezeit T = T , i = I t vj vj max TM TAVM q circuit commutated turn-off time v = 100 V, v = 0,67 V RM DM DRM Thermische Eigenschaften dv /dt = 20 V/s, -di /dt = 10 A/s D T th 4.Kennbuchstabe / 4 letter O Mechanische Eigenschaften Thermische Eigenschaften / Thermal properties Khlflche / cooling surface R Innerer Wrmewiderstand thJC beidseitig / two-sided, = 180sin max. 0,039 C/W thermal resistance, junction to case beidseitig / two-sided, DC max. 0,035 C/W Anode / anode, = 180sin max. 0,062 C/W Anode / anode, DC max. 0,058 C/W Kathode / cathode, = 180sin max. 0,092 C/W Kathode / cathode, DC max. 0,089 C/W Khlflche / cooling surface bergangs-Wrmewiderstand R thCH beidseitig / two-sides max. 0,007 C/W thermal resistance, case to heatsink einseitig / single-sides max. 0,014 C/W Hchstzulssige Sperrschichttemperatur T 125C vj max maximum junction temperature Betriebstemperatur T -40...+125C c op operating temperature Lagertemperatur T -40...+150C stg storage temperature Mechanische Eigenschaften / Mechanical properties Gehuse, siehe Anlage Seite 3 case, see annex page 3 Si-Element mit Druckkontakt Si-pellet with pressure contact Anpresskraft F 6...12kN clamping force Steueranschlsse Gate (flat) A 2,8x0,5 mm control terminals Gate (round, based on AMP 60598) 1,5 mm Kathode / cathode A 4,8x0,5 mm Gewicht G typ. 110g weight Kriechstrecke 6mm creepage distance Schwingfestigkeit f = 50 Hz 50 m/s vibration resistance IFBIP D AEC / 2010-01-13, H.Sandmann A 01/10 Seite/page 2/10

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