Technische Information / technical information Net z-Thyristor-Modul TT215N Phase Control Thyristor Module Key Parameters V / V 1800 2200 V DRM RRM ITAVM 215 A (TC=85 C) I 7000 A TSM 3570A (T =55C) C V 0,95 V T0 rT 0,92 m R 0,124 K/W thJC Base plate 50 mm Weight 800 g For type designation please refer to actual short form catalog Technische Information / technical information Net z-Thyristor-Modul TT215N Phase Control Thyristor Module TT215N TD215N TD215N22KOF TIM Elektrische Eigenschaften / Electrical properties Hchstzulssige Werte / Maximum rated values 1800 V Periodische Vorwrts- und Rckwrts-Spitzensperrspannung T = -40C... T V ,V vj vj max DRM RRM 2000 V repetitive peak forward off-state and reverse voltages 2200 V 1800 V Vorwrts-Stospitzensperrspannung T = -40C... T V vj vj max DSM 2000 V non-repetitive peak forward off-state voltage 2200 V 1900 V Rckwrts-Stospitzensperrspannung T = +25C... T V vj vj max RSM 2100 V non-repetitive peak reverse voltage 2300 V Durchlastrom-Grenzeffektivwert I 410 A TRMSM maximum RMS on-state current 215 Dauergrenzstrom T = 85C ITAVM A C average on-state current Stostrom-Grenzwert T = 25C, t = 10ms I 7000 A vj P TSM surge current T = T , t = 10ms 6300 A vj vj max P 245000 Grenzlastintegral T = 25C, t = 10ms It As vj P 198000 It-value T = T , t = 10ms As vj vj max P Kritische Stromsteilheit DIN IEC 747-6 (di /dt) 100 A/s T cr critical rate of rise of on-state current f = 50Hz, i = 1A, di /dt = 1A/s GM G Kritische Spannungssteilheit T = T , v = 0,67 V (dv /dt) vj vj max D DRM D cr th 1000 critical rate of rise of off-state voltage 6.Kennbuchstabe / 6 letter F V/s Charakteristische Werte / Characteristic values max. 1,8 V Durchlaspannung T = T , i = 800 A v vj vj max T T on-state voltage max. 0,95 V Schleusenspannung T = T V vj vj max (TO) threshold voltage max. 0,92 m Ersatzwiderstand T = T r vj vj max T slope resistance max. Zndstrom T = 25C, v = 12V I 200 mA vj D GT gate trigger current max. Zndspannung T = 25C, v = 12V V 2,0 V vj D GT gate trigger voltage max. Nicht zndender Steuerstrom T = T , v = 12V I 10 mA vj vj max D GD max. gate non-trigger current T = T , v = 0,5 V 5 mA vj vj max D DRM Nicht zndende Steuerspannung T = T , v = 0,5 V V max. 0,25 V vj vj max D DRM GD gate non-trigger voltage Haltestrom T = 25C, v = 12V, R = 1 I max. 300 mA vj D A H holding current Einraststrom T = 25C, v = 12V, R 10 I max. 1200 mA vj D GK L latching current i = 1A, di /dt = 1A/s, t = 20s GM G g Vorwrts- und Rckwrts-Sperrstrom T = T i , i max. 50 mA vj vj max D R forward off-state and reverse current v = V , v = V D DRM R RRM Zndverzug DIN IEC 747-6 t max. 4 s gd gate controlled delay time T = 25C, i = 1A, di /dt = 1A/s vj GM G AG date of publication: 2019-08-16 prepared by: revision: 3.1 approved by: ML Date of Publication 2019-08-16 Revision: 3.1 Seite/page 2/11