Technische Information / technical information Net z-Thyristor-Modul TT320N16SOF Phase Control Thyristor Module Key Parameters VDRM / VRRM 1600V 16 320 A (T =85 C) I C TAVM V I 9500 A TSM V 0,77 V T0 9500 320 rT 0,58 m 0,77 A A (T =85C) C RthJC sin180 0,110 K/W 0,58 V Base plate 50mm 0,096 m K/W For type designation please refer to actual short form catalog Technische Information / technical information Netz-Thyristor-Modul TT320N16SOF Phase Control Thyristor Module TT320N16SOF TD320N16SOF TT320N16SOF TIM TD320N16SOF TIM Elektrische Eigenschaften / Electrical properties Hchstzulssige Werte / Maximum rated values 1600 V Periodische Vorwrts- und Rckwrts-Spitzensperrspannung T = -40C... T V ,V vj vj max DRM RRM repetitive peak forward off-state and reverse voltages 1600 V Vorwrts-Stospitzensperrspannung T = -40C... T V vj vj max DSM non-repetitive peak forward off-state voltage 1700 V Rckwrts-Stospitzensperrspannung T = +25C... T V vj vj max RSM non-repetitive peak reverse voltage Durchlastrom-Grenzeffektivwert I 520 A TRMSM maximum RMS on-state current Dauergrenzstrom I 320 A TC = 85C TAVM average on-state current Stostrom-Grenzwert T = 25C, t = 10ms I 9500 A vj P TSM 8200 surge current T = T , t = 10ms A vj vj max P Grenzlastintegral T = 25C, t = 10ms It 450000 As vj P It-value T = T , t = 10ms 335000 As vj vj max P Kritische Stromsteilheit DIN IEC 747-6 (di /dt) 100 A/s T cr critical rate of rise of on-state current f = 50Hz, i = 1A, di /dt = 1A/s GM G Kritische Spannungssteilheit T = T , v = 0,67 V (dv /dt) 1000 V/s vj vj max D DRM D cr th critical rate of rise of off-state voltage 6.Kennbuchstabe / 6 letter F Charakteristische Werte / Characteristic values max. 1,47 V Durchlaspannung T = T , i = 750 A v vj vj max T T on-state voltage max. 0,77 V Schleusenspannung T = T V vj vj max (TO) threshold voltage max. 0,58 m Ersatzwiderstand T = T r vj vj max T slope resistance max. Zndstrom T = 25C, v = 12V I 150 mA vj D GT gate trigger current max. Zndspannung T = 25C, v = 12V V 2 V vj D GT gate trigger voltage max. Nicht zndender Steuerstrom T = T , v = 12V I 10 mA vj vj max D GD max. gate non-trigger current T = T , v = 0,5 V 5 mA vj vj max D DRM Nicht zndende Steuerspannung T = T , v = 0,5 V V max. 0,25 V vj vj max D DRM GD gate non-trigger voltage Haltestrom T = 25C, v = 12V, R = 1 I max. 150 mA vj D A H holding current Einraststrom T = 25C, v = 12V, R 10 I max. 380 mA vj D GK L latching current i = 1A, di /dt = 1A/s, t = 20s GM G g Vorwrts- und Rckwrts-Sperrstrom T = T i , i max. 60 mA vj vj max D R forward off-state and reverse current v = V , v = V D DRM R RRM Zndverzug DIN IEC 747-6 t max. 2 s gd gate controlled delay time T = 25C, i = 1A, di /dt = 1A/s vj GM G prepared by: AG date of publication: 2019-05-27 approved by: MS revision: 3.8 Date of Publication 2019-05-27 Revision: 3.8 Seite/page 2/11