Product Information

IN-S32GTNPD

IN-S32GTNPD electronic component of Inolux

Datasheet
Photodiodes Top View 3527 3.2x2.7x1.1

Manufacturer: Inolux
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

12000: USD 0.1526 ea
Line Total: USD 1831.2

0 - Global Stock
MOQ: 12000  Multiples: 12000
Pack Size: 12000
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1

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IN-S32GTNPD
Inolux

1 : USD 0.5831
10 : USD 0.3599
100 : USD 0.2128
1000 : USD 0.1725
3000 : USD 0.1484
9000 : USD 0.1392
24000 : USD 0.138
45000 : USD 0.138
99000 : USD 0.1357

     
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IN-S32GTNPD Photodiode Top View SMD 3.2 x 2.7 PCB Type Features Description The IN-S32GTNPD is a popular 3.2 x 2.7mm package 3.2 x 2.7 SMD LED Low power consumption with versatile design capabilities. It is a PCB type LED General purpose leads which can be used in various applications. Due to its Bulk, Available on tape and reel black epoxy, the device is matched to visible light and Fast response time infrared radiation. High photo sensitivity Recommended Solder Pattern Small junction capacitance Applications High speed photo detector Automatic door sensor Security system Industrial equipment Infrared application system Figure 1. IN-S32GTNPD Solder Pattern Package Dimensions in mm Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is 0.25 mm (.010 ) unless otherwise noted. Figure 1. IN-S32GTNPD Package Dimensions Inolux Corporation January, 31, 2019 www.inolux-corp.com Proprietary & Confidential Page 1 IN-S32GTNPD Photodiode Top View SMD 3.2 x 2.7 PCB Type o Absolute Maximum Rating at 25 C Symbol Parameters Ratings Units Notes VBR Reverse Breakdown Voltage 35 V 1 Topr Operating Temperature -40~+85 Tstg Storage Temperature -40~+85 Tsol Soldering Temperature 260 2 PD Total Power Dissipation 150 mW Notes 1. Test conditions : IR=100A, Ee=0mW/cm2. 2. Soldering time5 seconds. Electro-Optical Characteristics Test Symbol Parameters Min Typ Max Units conditions D Rang of Spectral Bandwidth --- 700 - 1100 nm Wavelength of Peak P --- - 940 nm Sensitivity Ee=0mW/cm2 VBR Reverse Breakdown Voltage 35 - - V IR=100uA Ee=1mW/cm Open-Circuit Voltage - 0.42 - V VOC P=940nm Ee=1mW/cm ISC Short-Circuit Current - 8.5 - uA P=940nm Ee=0mW/cm Dark Current - - 10 nA ID VR=10V Ee=1mW/cm Reverse Light Current P=940nm, 5.7 - 16 uA IL VR=5V Rise Time - 10 - uS tr VR=5V, RL=1K tf Fall Time - 10 - uS Ee=0mW/cm CT Transition Capacitance 4.76 pF f=1MHz, VR=5V Notes: Test circuit Inolux Corporation January, 31, 2019 www.inolux-corp.com Proprietary & Confidential Page 2

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
HTK
INOLUX
Inolux / Harvatek
Inolux Corporation

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