Product Information

2N4861A

2N4861A electronic component of InterFET

Datasheet
JFET JFET N-Channel -30V 1.8W 10mW 50mA

Manufacturer: InterFET
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 11.6035 ea
Line Total: USD 11.6

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 21 May to Thu. 23 May

MOQ : 1
Multiples : 1

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2N4861A
InterFET

1 : USD 12.6615
10 : USD 11.2815
25 : USD 11.155
50 : USD 10.534
100 : USD 10.028
250 : USD 9.7175
500 : USD 9.2345
1000 : USD 8.8205
2500 : USD 8.4755

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Vds - Drain-Source Breakdown Voltage
Vgs - Gate-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Configuration
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Series
Brand
Drain-Source Current At Vgs 0
Gate-Source Cutoff Voltage
Factory Pack Quantity :
Type
Cnhts
Hts Code
Mxhts
Taric
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Product Technical OrOrdderer Folder Support NowNow InterFET 2N4859-60-61A 2N4859/A, 2N4860/A, 2N4861/A N-Channel JFET Features TO-18 Bottom View InterFET N0132S Geometry Gate/Case 3 Low Noise: 1.2 nV/Hz Typical Fast Switching Drain 2 RoHS Compliant SMT, TH, and Bare Die Package options. Source 1 Applications Choppers SOT23 Top View Commutators Analog Switches Source 1 Gate Description 3 The -30V InterFET 2N4859/A, 2N4860/A, and Drain 2 2N4861/A JFETs are targeted for very low noise switching applications for mid to high frequency designs. Gate leakages are typically 50pA at room TO-92 Bottom View temperatures. The TO-18 package is hermetically sealed and suitable for military applications. Gate 3 Drain 2 Source 1 Product Summary Parameters 2N4859/A Min 2N4860/A Min 2N4861/A Min Unit BV Gate to Source Breakdown Voltage -30 -30 -30 V GSS IDSS Drain to Source Saturation Current 50 20 8 mA VGS(off) Gate to Source Cutoff Voltage -4 -2 -0.8 V Ordering Information Custom Part and Binning Options Available Part Number Description Case Packaging 2N4859 2N4860 2N4861 2N4859A 2N4860A 2N4861A Through-Hole TO-18 Bulk PN4859 PN4860 PN4861 PN4859A PN4860A PN4861A Through-Hole TO-92 Bulk SMP4859 SMP4860 SMP4861 SMP4859A SMP4860A SMP4861A Surface Mount SOT23 Bulk SMP4859TR SMP4860TR SMP4861TR 7 Tape and Reel: Max 3,000 Pieces Minimum 1,000 Pieces SMP4859ATR SMP4860ATR SMP4861ATR 13 Tape and Reel: Max 9,000 Pieces SOT23 Tape and Reel 2N4859COT 2N4860COT 2N4861COT Chip Orientated Tray 2N4859ACOT 2N4860ACOT 2N4861ACOT (COT Waffle Pack) COT 400/Waffle Pack 2N4859CFT 2N4860CFT 2N4861CFT Chip Face-up Tray 2N4859ACFT 2N4860ACFT 2N4861ACFT (CFT Waffle Pack) CFT 400/Waffle Pack Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and security requirements is the responsibility of the Buyer. These resources are subject to change without notice. IF35062.R00Product Technical OrOrdderer Folder Support NowNow InterFET 2N4859-60-61A Electrical Characteristics Maximum Ratings ( TA = 25C, Unless otherwise specified) Parameters Value Unit VRGS Reverse Gate Source and Gate Drain Voltage -30 V I Continuous Forward Gate Current 50 mA FG P Continuous Device Power Dissipation 1800 mW D P Power Derating 10 mW/C T Operating Junction Temperature -55 to 125 C J T Storage Temperature -65 to 150 C STG Static Characteristics ( TA = 25C, Unless otherwise specified, Highlighted values = A variant) 2N4859/A 2N4860/A 2N4861/A Parameters Conditions Min Max Min Max Min Max Unit Gate to Source V(BR)GSS IG = -1A,VDS = 0V -30 -30 -30 V Breakdown Voltage Gate to Source V = -15V, V = 0V, T = 25C -250 -200 -200 pA GS DS A IGSS Reverse Current V = -15V, V = 0V, T = 150C -500 -500 -500 nA GS DS A Gate to Source VGS(OFF) VDS = 15V, ID = 0.5nA -4 -10 -2 -6 -0.8 -4 V Cutoff Voltage Drain to Source V = 15V, V = 0V DS GS IDSS 50 20 100 8 80 mA Saturation Current (Pulsed) V = 15V, V = -10V, T = 25C 250 250 250 pA DS GS A ID(OFF) Drain Cutoff Current V = 15V, V = -10V, T = 150C 500 500 500 nA DS GS A Drain to Source 0.75 0.5 0.5 V VDS(ON) VGS = 0V, ID = ( ) ON Voltage (20) (10) (5) mA Dynamic Characteristics ( TA = 25C, Unless otherwise specified, Highlighted values = A variant) 2N4859/A 2N4860/A 2N4861/A Parameters Conditions Min Max Min Max Min Max Unit Drain to Source VGS = 0V, ID = 0A, RDS(ON) 25 40 60 ON Resistance f = 1kHz V = 0V, V = -10V, 18 18 18 DS GS C Input Capacitance pF iss f = 1MHz 10 10 10 Reverse Transfer 8 8 8 VDS = 0V, VGS = -10V, Crss pF Capacitance f = 1MHz 4 3.5 3.5 6 6 10 ns VDD = 10V, VGS(ON) = 0V 5 6 8 t Turn-On Delay Time d ID(ON) = ( ), VGS(OFF) = (20) (10) (5) (mA) -10 -6 -4 V 3 4 10 ns V = 10V, V = 0V 3 4 8 DD GS(ON) tr Rise Time I = ( ), V = D(ON) GS(OFF) (20) (10) (5) (mA) -10 -6 -4 V 25 50 100 ns VDD = 10V, VGS(ON) = 0V 25 40 80 t Turn-Off Delay Time d(off) ID(ON) = ( ), VGS(OFF) = (20) (10) (5) (mA) -10 -6 -4 V 2N4859-60-61A 2 of 5 InterFET Corporation Document Number: IF35062.R00 www.InterFET.com December, 2018

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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