Product Technical OrOrdderer Folder Support NowNow InterFET 2N4416-A 2N4416, 2N4416A N-Channel JFET Features TO-72 Bottom View InterFET N0026S Geometry Gate 3 Low Noise: 4 nV/Hz Typical Low Leakage: 10pA Typical Drain 2 4 Case RoHS Compliant SMT, TH, and Bare Die Package options. Source 1 Applications Mixers SOT23 Top View VHF Amplifiers Source 1 Description Gate 3 The -30V InterFET 2N4416 and 2N4416A are targeted for sensitive mixer and VHF Amplifier Drain 2 amplifier designs. Gate leakages are typically less than 10pA at room temperatures. The A variant has a higher breakdown Voltage. The TO-72 TO-92 Bottom View package is hermetically sealed and suitable for military applications. Gate 3 Drain 2 Source 1 Product Summary Parameters 2N4416 Min 2N4416A Min Unit BV Gate to Source Breakdown Voltage -30 -35 V GSS I Drain to Source Saturation Current 5 5 mA DSS VGS(off) Gate to Source Cutoff Voltage -2.5 V GFS Forward Transconductance 4500 4500 S Ordering Information Custom Part and Binning Options Available Part Number Description Case Packaging 2N4416 2N4416A Through-Hole TO-72 Bulk PN4416 PN4416A Through-Hole TO-92 Bulk SMP4416 SMP4416A Surface Mount SOT23 Bulk 7 Tape and Reel: Max 3,000 Pieces Minimum 1,000 Pieces SMP4416TR SMP4416ATR 13 Tape and Reel: Max 9,000 Pieces SOT23 Tape and Reel 2N4416COT 2N4416ACOT Chip Orientated Tray (COT Waffle Pack) COT 400/Waffle Pack 2N4416CFT 2N4416ACFT Chip Face-up Tray (CFT Waffle Pack) CFT 400/Waffle Pack Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and security requirements is the responsibility of the Buyer. These resources are subject to change without notice. IF35031.R00Product Technical OrOrdderer Folder Support NowNow InterFET 2N4416-A Electrical Characteristics Maximum Ratings ( TA = 25C, Unless otherwise specified, Highlighted values = A variant) Parameters Value Unit -30 VRGS Reverse Gate Source and Gate Drain Voltage V -35 I Continuous Forward Gate Current 10 mA FG P Continuous Device Power Dissipation 300 mW D P Power Derating 2 mW/C TJ Operating Junction Temperature -55 to 125 C TSTG Storage Temperature -65 to 150 C Static Characteristics ( TA = 25C, Unless otherwise specified) 2N4416 2N4416A Parameters Conditions Min Max Min Max Unit Gate to Source Breakdown V(BR)GSS VDS = 0V, IG = -1A -30 -35 V Voltage Gate to Source V = -20V, V = 0V, T = 25C -0.1 -0.1 nA GS DS A IGSS Reverse Current V = -20V, V = 0V, T = 150C -0.1 -0.1 A GS DS A Gate to Source VGS(OFF) VDS = 15V, ID = 1nA -6 -2.5 -6 V Cutoff Voltage Drain to Source Saturation V = 0V, V = 15V GS DS IDSS 5 15 5 15 mA Current (Pulsed) Dynamic Characteristics ( TA = 25C, Unless otherwise specified) 2N4416 2N4416A Parameters Conditions Min Max Min Max Unit Forward V = 15V, V = 0V, f = 1kHz 4500 7500 4500 7500 DS GS GFS S Transconductance V = 15V, V = 0V, f = 400MHz 4000 4000 DS GS VDS = 15V, VGS = 0V, f = 1kHz 50 50 GOS Output Conductance VDS = 15V, VGS = 0V, f = 100MHz 75 75 S V = 15V, V = 0V, f = 400MHz 100 100 DS GS Ciss Input Capacitance VDS = 15V, VGS = 0V, f = 1MHz 4 4 pF C Output Capacitance V = 15V, V = 0V, f = 1MHz 2 2 pF OSS DS GS Reverse Transfer Crss VDS = 15V, VGS = 0V, f = 1MHz 0.8 0.8 pF Capacitance VDS = 15V, VGS = 0V, f = 100MHz 100 100 Gis Input Conductance S V = 15V, V = 0V, f = 400MHz 1000 1000 DS GS VDS = 15V, VGS = 0V, f = 100MHz 2500 2500 bis Input Susceptance S V = 15V, V = 0V, f = 400MHz 10000 10000 DS GS VDS = 15V, VGS = 0V, f = 100MHz 1000 1000 bos Output Susceptance S V = 15V, V = 0V, f = 400MHz 4000 4000 DS GS VDS = 15V, ID = 5mA, f = 100MHz 18 18 Gps Power Gain dB V = 15V, I = 5mA, f = 400MHz 10 10 DS D VDS = 15V, VGS = 0V, f = 100MHz 2 2 Noise Figure V = 15V, V = 0V, f = 400MHz 4 4 dB DS GS NF R = 1 k G 2N4416-A 2 of 5 InterFET Corporation Document Number: IF35031.R00 www.InterFET.com December, 2018