Product Technical OrOrdderer Folder Support NowNow InterFET 2N5114-5-6 2N5114, 2N5115, 2N5116 P-Channel JFET Features TO-18 Bottom View InterFET P0099F Geometry Drain 3 Typical Noise: 8 nV/Hz Low Rds(on) Gate/Case 2 RoHS Compliant SMT, TH, and Bare Die Package options. Source 1 Applications Analog Switches SOT23 Top View Choppers Source 1 Description Gate 3 The 30V InterFET 2N5114, 2N5115, and 2N5116 are targeted for choppers and analog switch Drain 2 designs. The on resistance is typically less than 100 Ohms at room temperatures. The TO-18 package is hermetically sealed and suitable for TO-92 Bottom View military applications. Drain 3 Gate 2 Source 1 Product Summary Parameters 2N5114 Min 2N5115 Min 2N5116 Min Unit BVGSS Gate to Source Breakdown Voltage 30 30 30 V I Drain to Source Saturation Current -30 -15 -5 mA DSS VGS(off) Gate to Source Cutoff Voltage 5 3 1 V Ordering Information Custom Part and Binning Options Available Part Number Description Case Packaging 2N5114 2N5115 2N5116 Through-Hole TO-18 Bulk PN5114 PN5115 PN5116 Through-Hole TO-92 Bulk SMP5114 SMP5115 SMP5116 Surface Mount SOT23 Bulk SMP5114TR SMP5115TR 7 Tape and Reel: Max 3,000 Pieces Minimum 1,000 Pieces SMP5116TR 13 Tape and Reel: Max 9,000 Pieces SOT23 Tape and Reel 2N5114COT 2N5115COT 2N5116COT Chip Orientated Tray (COT Waffle Pack) COT 400/Waffle Pack 2N5114CFT 2N5115CFT 2N5116CFT Chip Face-up Tray (CFT Waffle Pack) CFT 400/Waffle Pack Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and security requirements is the responsibility of the Buyer. These resources are subject to change without notice. IF35086.R00Product Technical OrOrdderer Folder Support NowNow InterFET 2N5114-5-6 Electrical Characteristics Maximum Ratings ( TA = 25C, Unless otherwise specified) Parameters Value Unit VRGS Reverse Gate Source and Gate Drain Voltage 30 V I Continuous Forward Gate Current 50 mA FG P Continuous Device Power Dissipation 500 mW D P Power Derating 4 mW/C T Operating Junction Temperature -55 to 125 C J T Storage Temperature -65 to 200 C STG Static Characteristics ( TA = 25C, Unless otherwise specified) 2N5114 2N5115 2N5116 Parameters Conditions Min Max Min Max Min Max Unit Gate to Source V V = 0V, I = -1mA 30 30 30 V (BR)GSS DS G Breakdown Voltage Gate to Source VDS = 20V, VGS = 0V, TA = 25C 2 2 2 nA I GSS Reverse Current VDS = 20V, VGS = 0V, TA = 150C 10 10 10 A Gate to Source V V = -15V, I = -1nA 5 10 3 6 1 4 V GS(OFF) DS D Cutoff Voltage Gate to Source V V = 0V, I = -1mA -1 -1 -1 V GS(F) DS G Forward Voltage VGS = 18V, VDS = -15V -30 -90 Drain to Source IDSS VGS = 15V, VDS = -15V -15 -60 -5 -25 mA Saturation Current (Pulsed) VDS = -15V, VGS = 12V, TA = 25C -2 -2 -2 nA I Drain Cutoff Current D(OFF) VDS = -15V, VGS = 7V, TA = 150C -10 -10 -10 A VGS = 0V, ID = -15mA -1.3 Drain to Source V V = 0V, I = -7mA -0.8 V DS(ON) GS D ON Voltage V = 0V, I = -3mA -0.6 GS D Static Drain to Source RDS(ON) VGS = 0V, ID = -1mA 75 100 150 ON Resistance Dynamic Characteristics ( TA = 25C, Unless otherwise specified) 2N5114 2N5115 2N5116 Parameters Conditions Min Max Min Max Min Max Unit Drain to Source R V = 0V, I = 0A, f = 1kHz 75 100 150 DS(ON) GS D ON Resistance Ciss Input Capacitance VDS = -15V, VGS = 0V, f = 1MHz 25 25 27 pF VDS = -10V, VGS = 12V, f = 1MHz 7 Reverse Transfer C V = -10V, V = 7V, f = 1MHz 7 pF rss DS GS Capacitance VDS = -10V, VGS = 5V, f = 1MHz 7 t Turn-On Delay Time V = V 6 10 25 ns d(ON) DD tr Rise Time VDD = V 10 20 35 ns td(OFF) Turn-Off Delay Time VDD = V 6 8 20 ns t Fall Time V = V 15 30 60 ns f DD 2N5114-5-6 2 of 5 InterFET Corporation Document Number: IF35086.R00 www.InterFET.com December, 2018