Product Technical OrOrdderer Folder Support NowNow InterFET IF1322-A IF1322, IF1322A Dual Matched N-Channel JFET TO-71 Bottom View Features Source InterFET N0132L Geometry 5 Drain 6 Low Noise: 1.0 nV/Hz Typical High Gain: 20mS Typical Gate 3 7 Gate Low Cutoff Voltage: 1.5V Maximum RoHS Compliant 2 Drain 1 SMT, TH, and Bare Die Package options. Source Applications SOIC8 Top View Low Noise High Gain Amplifier Differential Amplifiers Gate 1 8 Gate Instrumentation Amplifiers Drain 2 7 Source Acoustic and Vibration Sensors Source 3 6 Drain Gate 4 5 Gate Description The -20V InterFET IF1322 matched pair JFET is targeted for low noise high gain differential amplifier designs. The IF1322 has a cutoff voltage of less than 1.5V ideal for low-level power supplies. The TO-71 package is hermetically sealed and suitable for military uses. Custom specifications, matching, and packaging options are available. Product Summary Parameters IF1322 Min IF1322A Min Unit BV Gate to Source Breakdown Voltage -20 -20 V GSS IDSS Drain to Source Saturation Current 8 8 mA V Gate to Source Cutoff Voltage -0.8 -0.8 V GS(off) GFS Forward Transconductance 10 10 mS Ordering Information Custom Part and Binning Options Available Part Number Description Case Packaging IF1322T71 IF1322AT71 Through-Hole TO-71 Bulk IF1322S08 IF1322AS08 Surface Mount SOIC8 Bulk 7 Tape and Reel: Max 500 Pieces Minimum 500 Pieces IF1322S08TR IF1322AS08TR 13 Tape and Reel: Max 2,500 Pieces SOIC8 Tape and Reel IF1322COT IF1322ACOT * Chip Orientated Tray (COT Waffle Pack) COT 70/Waffle Pack IF1322CFT IF1322ACFT * Chip Face-up Tray (CFT Waffle Pack) CFT 70/Waffle Pack * Bare die packaged options are designed for matched specifications but not 100% tested Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and security requirements is the responsibility of the Buyer. These resources are subject to change without notice. IF35095.R01Product Technical OrOrdderer Folder Support NowNow InterFET IF1322-A Electrical Characteristics Maximum Ratings ( T = 25C, Unless otherwise specified) A Parameters Value Unit VRGS Reverse Gate Source and Gate Drain Voltage -20 V IFG Continuous Forward Gate Current 50 mA PD Continuous Device Power Dissipation 400 mW P Power Derating 2.3 mW/C TJ Operating Junction Temperature -55 to 125 C TSTG Storage Temperature -65 to 150 C Static Characteristics ( TA = 25C, Unless otherwise specified) IF1322 IF1322A Parameters Conditions Min Max Min Max Unit GSS1: IG = -25A, VDS = 0V Gate to Source V GSS2: I = -3A, V = 0V -20 -20 V (BR)GSS G DS Breakdown Voltage GSS3: I = -1A, V = 0V G DS Gate to Source IGSS VDS = 0V, VGS = -10V -0.1 -0.1 nA Reverse Current Gate to Source V V = 10V, I = 1A -0.8 -1.5 -0.8 -1.5 V GS(OFF) DS D Cutoff Voltage Gate to Source VDS = 0V, IG = -1mA 1.0 1.0 V V GS(F) Forward Voltage VDS = 0V, IG = -1A 0.3 0.3 Drain to Source V = 10V, V = 0V DS GS IDSS 8 25 8 25 mA Saturation Current (Pulsed) Dynamic Characteristics ( TA = 25C, Unless otherwise specified) IF1322 IF1322A Parameters Conditions Min Max Min Max Unit Forward GFS VDS = 5V, VGS = 0V 10 10 mS Transconductance Differential Gate V V V = 5V, I = 3mA 30 40 mV GS 1 GS2 DS D Source Voltage Equivalent Circuit V = 5V, I = 3mA, f = 1kHz 2 2 DS D nV/ Hz en Input Noise Voltage VDS = 5V, ID = 3mA, f = 100Hz 4 4 Equivalent Circuit i VDS = 5V, ID = 3mA, f = 1kHz 0.05 0.05 pA/ Hz n Input Noise Current IF1322-A 2 of 6 InterFET Corporation Document Number: IF35095.R01