Product Technical OrOrdderer Folder Support NowNow InterFET IFN860 IFN860 Dual Matched N-Channel JFET Features TO-71 Bottom View Source InterFET N0450L Geometry 5 Drain Low Noise: 0.9 nV/Hz Typical 6 High Gain: 40mS Typical Gate 3 7 Gate RoHS Compliant SMT, TH, and Bare Die Package options. 2 Drain 1 Source Applications Low-Noise Audio Amplifier SOIC8 Top View Similar to Crystalonics CD860 Gate 1 8 Gate Description Drain 2 7 Source The -20V InterFET IFN860 JFET is targeted for low Source 3 6 Drain noise high gain amplifier stages for mid- Gate 4 5 Gate frequencies designs. The TO-71 package is hermetically sealed and suitable for military applications. Custom specifications, matching, and packaging options are available. Product Summary Parameters IFN860 Min Unit BVGSS Gate to Source Breakdown Voltage -20 V I Drain to Source Saturation Current 10 mA DSS V Gate to Source Cutoff Voltage -0.3 V GS(off) GFS Forward Transconductance 25 mS Ordering Information Custom Part and Binning Options Available Part Number Description Case Packaging IFN860 Through-Hole TO-71 Bulk SMP860 Surface Mount SOIC8 Bulk 7 Tape and Reel: Max 3,000 Pieces Minimum 1,000 Pieces SMP860TR 13 Tape and Reel: Max 9,000 Pieces SOIC8 Tape and Reel IFN860COT * Chip Orientated Tray (COT Waffle Pack) COT 70/Waffle Pack IFN860CFT * Chip Face-up Tray (CFT Waffle Pack) CFT 70/Waffle Pack * Bare die packaged options are designed for matched specifications but not 100% tested Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and security requirements is the responsibility of the Buyer. These resources are subject to change without notice. IF35070.R00Product Technical OrOrdderer Folder Support NowNow InterFET IFN860 Electrical Characteristics Maximum Ratings ( TA = 25C, Unless otherwise specified) Parameters Value Unit VRGS Reverse Gate Source and Gate Drain Voltage -20 V I Continuous Forward Gate Current 50 mA FG P Continuous Device Power Dissipation 400 mW D P Power Derating 2.3 mW/C T Operating Junction Temperature -55 to 125 C J T Storage Temperature -65 to 200 C STG Static Characteristics ( TA = 25C, Unless otherwise specified) IFN860 Parameters Conditions Min Max Unit Gate to Source V(BR)GSS VDS = 0V, IG = -1A -20 V Breakdown Voltage Gate to Source IGSS VGS = -10V, VDS = 0V 3 nA Reverse Current Gate to Source VGS(OFF) VDS = 10V, ID = 100A -0.3 -3 V Cutoff Voltage Drain to Source V = 0V, V = 10V GS DS IDSS 10 mA Saturation Current (Pulsed) Differential Gate V V VDS = 10V, ID = 100A 25 mV G S 1 G S 2 Source Voltage Dynamic Characteristics ( TA = 25C, Unless otherwise specified) IFN860 Parameters Conditions Min Typ Max Unit Forward GFS VDS = 10V, ID = -10mA, f = 1kHz 25 40 mS Transconductance Ciss Input Capacitance VDS = 10V, ID = -10mA, f = 1MHz 30 35 pF Reverse Transfer C V = 10V, I = -10mA, f = 1MHz 17 20 pF rss DS D Capacitance Equivalent Circuit V = 3V, I = 10mA, f = 1kHz 2 DG D nV/ Hz e n Input Noise Voltage IFN860 2 of 4 InterFET Corporation Document Number: IF35070.R00 www.InterFET.com April, 2020