Product Technical OrOrdderer Folder Support NowNow InterFET J308-9-10 J308, J309, J310 N-Channel JFET Features SOT23 Top View InterFET N0072L Geometry Low Noise: 2 nV/Hz Typical Source 1 Low Ciss: 4pF Typical RoHS Compliant Gate 3 SMT, TH, and Bare Die Package options. Drain 2 Applications Mixers Oscillators TO-92 Bottom View VHF/UHF Amplifiers Gate 3 Description The -25V InterFET J308, J309, and J310 are Drain 2 targeted for higher gain VHF amplifiers, mixers, Source 1 and oscillators. Gate leakages are typically less than 10pA at room temperatures. Product Summary Parameters J308 Min J309 Min J310 Min Unit BVGSS Gate to Source Breakdown Voltage -25 -25 -25 V IDSS Drain to Source Saturation Current 12 12 24 mA V Gate to Source Cutoff Voltage -1 -1 -2 V GS(off) G Forward Transconductance 8 10 8 mS FS Ordering Information Custom Part and Binning Options Available Part Number Description Case Packaging J308 J309 J310 Through-Hole TO-92 Bulk SMPJ308 SMPJ309 SMPJ310 Surface Mount SOT23 Bulk 7 Tape and Reel: Max 3,000 Pieces Minimum 1,000 Pieces SMPJ308TR SMPJ309TR SMPJ310TR 13 Tape and Reel: Max 9,000 Pieces SOT23 Tape and Reel J308COT J309COT J310COT Chip Orientated Tray (COT Waffle Pack) COT 400/Waffle Pack J308CFT J309CFT J310CFT Chip Face-up Tray (CFT Waffle Pack) CFT 400/Waffle Pack Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and security requirements is the responsibility of the Buyer. These resources are subject to change without notice. IF35045.R00Product Technical OrOrdderer Folder Support NowNow InterFET J308-9-10 Electrical Characteristics Maximum Ratings ( TA = 25C, Unless otherwise specified) Parameters Value Unit VRGS Reverse Gate Source and Gate Drain Voltage -25 V I Continuous Forward Gate Current 10 mA FG P Continuous Device Power Dissipation 360 mW D P Power Derating 3.27 mW/C T Operating Junction Temperature -55 to 125 C J T Storage Temperature -65 to 150 C STG Static Characteristics ( TA = 25C, Unless otherwise specified) J308 J309 J310 Parameters Conditions Min Typ Max Min Typ Max Min Typ Max Unit Gate to Source V(BR)GSS VDS = 0V, IG = -1A -25 -25 -25 V Breakdown Voltage Gate to Source V = -15V, V = 0V, T = 25C -1 -1 -1 nA GS DS A IGSS Reverse Current V = -15V, V = 0V, T = 125C -1 -1 -1 A GS DS A Gate to Source VGS(OFF) VDS = 10V, ID = 1nA -1 -6.5 -1 -4 -2 -6.5 V Cutoff Voltage Gate to Source VGS(F) VDS = 0V, IG = 1mA 1 1 1 V Forward Voltage Drain to Source V = 0V, V = 10V GS DS IDSS 12 60 12 30 24 60 mA Saturation Current (Pulsed) Dynamic Characteristics ( TA = 25C, Unless otherwise specified) J308 J309 J310 Parameters Conditions Min Typ Max Min Typ Max Min Typ Max Unit Forward GFS VDS = 10V, ID = 10mA, f = 1kHz 8 17 10 17 8 17 mS Transconductance GOS Output Conductance VDS = 10V, ID = 10mA, f = 1kHz 250 250 250 S Gate Forward GFG VDS = 10V, ID = 10mA, f = 1kHz 13 13 1.2 mS Transconductance Gate Output GOG VDS = 10V, ID = 10mA, f = 1kHz 150 100 150 S Transconductance Cdg Drain Capacitance VDS = 0V, VGS = -10V, f = 1MHz 1.8 2.5 1.8 2.5 1.8 2.5 pF Cgs Source Capacitance VDS = 0V, VGS = -10V, f = 1MHz 4 5 4 5 4 5 pF Noise Voltage VDS = 10V, ID = 10mA, f = 100kHz 10 10 10 nV/ Hz en V = 15V, I = 10mA, f = 105MHz 1.5 1.5 1.5 DS D NF Noise Figure dB V = 15V, I = 10mA, f = 450MHz 2.7 2.7 2.7 DS D J308-9-10 2 of 4 InterFET Corporation Document Number: IF35045.R00 www.InterFET.com June, 2019