Product Technical OrOrdderer Folder Support NowNow InterFET 2N4117-8-9A 2N4117/A, 2N4118/A, 2N4119/A N-Channel JFET TO-72 Bottom View Features InterFET N0001H Geometry Gate 3 Low Leakage: 0.25 pA Typical Low Input Capacitance: 2.0 pF Typical Drain 4 Case 2 High Input Impedance RoHS Compliant Source 1 SMT, TH, and Bare Die Package options. Applications SOT23 Top View Low Leakage Input Buffer High Frequency Amplifier/Buffer Source 1 Ultrahigh Impedance Pre-Amplifier Voltage Controlled Resistor Gate 3 Current Limiters and Regulators Drain 2 Description The -50V InterFET 2N4117/A, 2N4118/A, and TO-92 Bottom View 2N4119/A JFETs are targeted for ultra high input impedance applications for mid to high frequency designs. Gate leakages are typically 1pA at room Gate 3 temperatures. The 2N4117 has a cutoff voltage of Drain 2 less than 1.8V ideal for low-level power supplies. The TO-72 package is hermetically sealed and Source 1 suitable for military applications. Product Summary Parameters 2N4117/A Min 2N4118/A Min 2N4119/A Min Unit BV Gate to Source Breakdown Voltage -40 -40 -40 V GSS IDSS Drain to Source Saturation Current 0.03 0.08 0.2 mA VGS(off) Gate to Source Cutoff Voltage -0.6 -1 -2 V G Forward Transconductance 70 80 100 S FS Ordering Information Custom Part and Binning Options Available Part Number Description Case Packaging 2N4117 2N4118 2N4119 2N4117A 2N4118A 2N4119A Through-Hole TO-72 Bulk PN4117 PN4118 PN4119 PN4117A PN4118A PN4119A Through-Hole TO-92 Bulk SMP4117 SMP4118 SMP4119 SMP4117A SMP4118A SMP4119A Surface Mount SOT23 Bulk SMP4117TR SMP4118TR SMP4119TR 7 Tape and Reel: Max 3,000 Pieces Minimum 1,000 Pieces SMP4117ATR SMP4118ATR SMP4119ATR 13 Tape and Reel: Max 9,000 Pieces SOT23 Tape and Reel Chip Orientated Tray 2N4117COT 2N4118COT 2N4119COT (COT Waffle Pack) COT 400/Waffle Pack Chip Face-up Tray 2N4117CFT 2N4118CFT 2N4119CFT (CFT Waffle Pack) CFT 400/Waffle Pack Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and security requirements is the responsibility of the Buyer. These resources are subject to change without notice. IF35001.R00Product Technical OrOrdderer Folder Support NowNow InterFET 2N4117-8-9A Electrical Characteristics Maximum Ratings ( TA = 25C, Unless otherwise specified) Parameters Value Unit VRGS Reverse Gate Source and Gate Drain Voltage -40 V I Continuous Forward Gate Current 50 mA FG P Continuous Device Power Dissipation 300 mW D P Power Derating 2 mW/C T Operating Junction Temperature -55 to 125 C J T Storage Temperature -65 to 150 C STG Static Characteristics ( TA = 25C, Unless otherwise specified, Highlighted values = A variant) 2N4117/A 2N4118/A 2N4119/A Parameters Conditions Min Max Min Max Min Max Unit Gate to Source V(BR)GSS IG = -1A,VDS = 0V -40 -40 -40 V Breakdown Voltage Gate to Source -10 -10 -10 pA I V = -20V, V = 0V GSS GS DS Reverse Current -1 -1 -1 pA Gate to Source VGS(OFF) VDS = 10V, ID = 1nA -0.6 -1.8 -1 -3 -2 -6 V Cutoff Voltage Drain to Source VDS = 10V, VGS = 0V 0.03 0.09 0.08 0.24 0.2 0.6 mA I DSS Saturation Current (Pulsed) 0.015 0.09 0.08 0.24 0.2 0.6 mA Dynamic Characteristics ( TA = 25C, Unless otherwise specified) 2N4117/A 2N4118/A 2N4119/A Parameters Conditions Min Max Min Max Min Max Unit Forward VDS = 10V, VGS = 0V, GFS 70 210 80 250 100 330 S Transconductance f = 1kHz Output V = 10V, V = 0V, DS GS G 3 5 10 S OS Conductance f = 1kHz V = 10V, V = 0V, DS GS C Input Capacitance 3 3 3 pF iss f = 1MHz Reverse Transfer V = 10V, V = 0V, DS GS C 1.5 1.5 1.5 pF rss Capacitance f = 1MHz 2N411-7-8-9A 2 of 7 InterFET Corporation Document Number: IF35001.R00 www.InterFET.com March, 2020