H11G1, H11G2, H11G3
H11G1X
HIGH VOLTAGE DARLINGTON
OUTPUT OPTICALLY COUPLED
ISOLATOR
APPROVALS
Dimensions in mm
2.54
UL recognised, File No. E91231
Package Code JJ
7.0 1 6
6.0
'X' SPECIFICATION APPROVALS
25
H11G1X VDE 0884 in 3 available lead form :
34
1.2
- STD
- G form
7.62 7.62
- SMD approved to CECC 00802
6.62
4.0
3.0
DESCRIPTION
13
The H11G_ series are optically coupled isolators
0.5
Max
consisting of an infrared light emitting diode and a
3.0
high voltage NPN silicon photo darlington which 0.26
3.35
0.5
has an integral base-emitter resistor to optimise
switching speed and elevated temperature
ABSOLUTE MAXIMUM RATINGS
characteristics in a standard 6pin dual in line plastic
(25C unless otherwise specified)
package.
Storage Temperature -40C to + 125C
FEATURES
Operating Temperature -25C to + 100C
Options :-
Lead Soldering Temperature
10mm lead spread - add G after part no.
(1/16 inch (1.6mm) from case for 10 secs) 260C
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
INPUT DIODE
High Isolation Voltage (5.3kV ,7.5kV )
RMS PK
High Current Transfer Ratio ( 1000% min)
Forward Current 50mA
High BV (H11G1 - 100V min.)
CEO
Reverse Voltage 6V
Low collector dark current :-
Power Dissipation 70mW
100nA max. at 80V V
CE
Low input current 1mA I
F
APPLICATIONS
OUTPUT TRANSISTOR
Modems
Copiers, facsimiles
Collector-emitter Voltage BV
CEO
Numerical control machines
H11G3, H11G2, H11G1 55, 80, 100V
Signal transmission between systems of
Collector-base Voltage BV
CBO
different potentials and impedances
H11G3, H11G2, H11G1 55, 80, 100V
Emitter-baseVoltage BV 6V
EBO
OPTION G
OPTION SM
Collector Current 150mA
SURFACE MOUNT 7.62
Power Dissipation 300mW
POWER DISSIPATION
0.6
1.25 0.26
0.1
0.75
Total Power Dissipation 350mW
10.46
10.16
9.86
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, TS25 1UD England Tel: (01429)863609
Fax : (01429) 863581 e-mail sales@isocom.co.uk
28/11/08
DB92008ELECTRICAL CHARACTERISTICS ( T = 25C Unless otherwise noted )
A
PARAMETER MIN TYP MAX UNITS TEST CONDITION
Input Forward Voltage (V ) 1.2 1.5 V I = 10mA
F F
Reverse Current (I)10 AV = 4V
R R
Output Collector-emitter Breakdown (BV )
CEO
H11G1 100 V I = 1mA
C
H11G2 80 V I = 1mA
C
H11G3 55 V I = 1mA
C
Collector-base Breakdown (BV )
CBO
H11G1 100 V I = 100A
C
H11G2 80 V I = 100A
C
H11G3 55 V I = 100A
C
Emitter-base Breakdown (BV)6 V I = 0.1mA
EBO E
Collector-emitter Dark Current (I )
CEO
H11G1 100 nA V = 80V
CE
H11G2 100 nA V = 60V
CE
H11G3 100 nA V = 30V
CE
Coupled Collector Output Current ( I )
C
H11G1, H11G2 100 mA 10mA I , 1.2V V
F CE
H11G1, H11G2 5 mA 1mA I , 5V V
F CE
H11G3 2 mA 1mA I , 5V V
F CE
Collector-emitter Saturation Voltage V
CE(SAT)
H11G1, H11G2 1.0 V 1mA I , 1mA I
F C
H11G1, H11G2 1.2 V 16mA I , 50mA I
F C
H11G3 1.2 V 20mA I , 50mA I
F C
Input to Output Isolation Voltage V 5300 V See note 1
ISO RMS
7500 V See note 1
PK
10 11
Input-output Isolation Resistance R 5x10 10 V = 500V (note 1)
ISO IO
Input-output Capacitance Cf 0.6 pF V = 0, f =1MHz
Response time (Rise), tr 100 sI = 20mA, V = 2V,
C CE
Response time (Fall), tf 20 sR = 100
L
Note 1 Measured with input leads shorted together and output leads shorted together.
Note 2 Special Selections are available on request. Please consult the factory.
FIGURE 1
V
CC
Input
t t
on off
I = 10mA
F
100
t t
r f
Output
Input Output
10% 10%
90%
90%
DB92008
28/11/08