IS355 Dimensions in m m consisting of an infrared light emitting diode and NPN silicon photodarlington in a space efficient dual in line plastic package. S l Marked as FPD1. l l V ) l l l l Industrial systems controllers l Measuring instruments l Signal transmission between systems of different potentials and impedances Unit 25B, Park View Road Park iew Industrial Estate, Brenda RoadV Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581 .isocom.com w DB92859l-AAS/A3 22/4/02 ABSOLUTE MAXIMUM R (25C unless otherwise specified) Storage Operating Lead Soldering 260C INPUT DIODE Forward Current 50mA oltage V Reverse V 6 Power Dissipation 70mW OUTPUT TRANSISTOR V V V V 6 Power Dissipation 150mW TION POWER DISSI W (derate linearly 2.26mW/ ELECTRICAL CHARACTERISTICS ( T = 25C Unless otherwise noted ) A PARAMETER MIN TYP MAX UNITS TEST CONDITION Input V ) 2 4 V I F F V ) V I A R R ) 0 1 A V R R Output ) 5 3 V I C ) V I E ) 1 uA V CEO 0 0 % V 1 V F C oltage V V Input to Output Isolation V See note 1 ISO V See note 1 10 Input-output Isolation Resistance R 5x10 V = 500V (note 1) ISO IO 4 8 1 s V 3 8 1 s I C L Note 1 Measured with input leads shorted together and output leads shorted togethe. r 22/4/02 DB92859l-AAS/A3 = 100 = 2mA, R tf Output Fall Time CE = 2V , tr Output Rise Time PK 5300 RMS 3750 (S AT) CE , 1mA I 20mA I Collector-emitter Saturation oltageV CE F , 2V V 1mA I 750 60 Current Transfer Ratio (CTR) Coupled CE = 10V Collector-emitter Dark Current (I ECO = 10uA 6 Emitter-collector Breakdown (BV CEO = 0.1mA Collector-emitter Breakdown (BV = 4V Reverse Current (I = 10 5 Reverse oltage (V = 20mA 1. 1. Forward oltage (V C above 25C) 170m Total Power Dissipation PA ECO Emitter-collector oltage BV CEO 35 Collector-emitter oltage BV (1/16 inch (1.6mm) from case for 10 secs) Temperature -55C to + 100C Temperature -55C to + 150C Temperature ATINGS