IS34ML04G081-TLI-TR ISSI

IS34ML04G081 IS35ML04G081 4Gb SLC-1b ECC 3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE IS34/35ML04G081 4Gb(x8) 3.3V NAND FLASH MEMORY with 1b ECC FEATURES Flexible & Efficient Memory Efficient Read and Program modes Architecture - Command/Address/Data Multiplexed I/O Interface - Organization: 512Mb x8 - Command Register Operation - Memory Cell Array: (512M + 16M) x 8bit - Automatic Page 0 Read at Power-Up Option - Data Register: (2K + 64) x 8bit - Boot from NAND support - Page Size: (2K + 64) Byte - Automatic Memory Download - Block Erase: (128K + 4K) Byte - NOP: 4 cycles - Memory Cell: 1bit/Memory Cell - Cache Program Operation for High Performance Program - Cache Read Operation Highest performance - Copy-Back Operation - Read Performance - EDO mode - Random Read: 25us (Max.) - Two-Plane Operation - Serial Access: 25ns (Max.) - Bad-Block-Protect - Write Performance - Program time: 400us - typical - Block Erase time: 3ms typical Advanced Security Protection - Hardware Data Protection - Program/Erase Lockout during Power Low Power with Wide Temp. Ranges Transitions - Single 3.3V (2.7V to 3.6V) Voltage Supply - 10 mA Active Read Current Industry Standard Pin-out & Packages - 8 A Standby Current - T = 48-pin TSOP (Type I) - Temp Grades: - Industrial: -40C to +85C - Extended: -40C to +105C - Automotive, A1: -40C to +85C - Automotive, A2: -40C to +105C - Reliable CMOS Floating Gate Technology - ECC Requirement: X8 - 1bit/512Byte - Endurance: 100K Program/Erase cycles - Data Retention: 10 years Integrated Silicon Solution, Inc.- www.issi.com 2 Rev. A2 06/16/2017