Product Information

IS37SML01G1-LLI

IS37SML01G1-LLI electronic component of ISSI

Datasheet
NAND Flash 1G 3.3V 104MHz Serial NAND Flash
Manufacturer: ISSI
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 8.2952 ea
Line Total: USD 8.3

4995 - Global Stock
Ships to you between
Thu. 16 May to Mon. 20 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
1605 - WHS 1


Ships to you between Thu. 16 May to Mon. 20 May

MOQ : 1
Multiples : 1
1 : USD 4.6972
10 : USD 4.2625
100 : USD 3.7191
250 : USD 3.707
480 : USD 3.5621
960 : USD 3.381
2880 : USD 3.224
10080 : USD 3.212

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Series
Memory Size
Interface Type
Data Bus Width
Supply Voltage - Min
Supply Voltage - Max
Supply Current - Max
Minimum Operating Temperature
Maximum Operating Temperature
Memory Type
Product
Brand
Maximum Clock Frequency
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
LoadingGif

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Additional Infomation About Product

IS37SML01G1 IS38SML01G1 1Gb SLC-1b ECC 3.3V SERIAL NAND FLASH MEMORY WITH 104MHZ MULTI I/O SPI INTERFACE DATA SHEET IS37/38SML01G1 1Gb 3.3V SPI-NAND FLASH MEMORY WITH 104MHZ MULTI I/O SPI INTERFACE with 1b ECC FEATURES Flexible & Efficient Memory Efficient Read and Program modes Architecture - Support SPI-Mode 0 and SPI-Mode 3 (1) - Bus Width: x1, x2 , x4 - Organization: - Command Register Operation - Memory Cell Array: (128M + 4M) x 8bit - NOP: 4 cycles - Data Register: (2K + 64) x 8bit - OTP Operation - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Bad-Block-Protect - Memory Cell: 1bit/Memory Cell - Boot Read Highest performance Advanced Security Protection - Frequency : 104MHz - Hardware Data Protection - Program/Erase Lockout during Power - Internal ECC Implementation: 1-bit ECC Transitions - Read Performance - Read from Cell to Register with Internal ECC: 100us Industry Standard Pin-out & Packages - M =16-pin SOIC 300mil - Write Performance - Program time: 400us - typical - L = 8-contact WSON 8x6mm - Block Erase time: 4ms typical Low Power with Wide Temp. Ranges - Single 3.3V (2.7V to 3.6V) Voltage Supply - 10 mA Active Read Current - 8 A Standby Current - Temp Grades: Note: 1. X2 Program Operation is not defined. - Industrial: -40C to +85C - Extended: -40C to +105C - Automotive, A1: -40C to +85C - Automotive, A2: -40C to +105C Reliable CMOS Floating Gate Technology - Internal ECC Requirement: 1bit/512Byte - Endurance: 100K Program/Erase cycles - Data Retention: 10 years Integrated Silicon Solution, Inc.- www.issi.com 2 Rev. A2 09/13/2020

HS Compliance

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)

ISSI may also be referenced as

Integrated Silicon Solution
Integrated Silicon Solution ()
Integrated Silicon Solution (ISSI)
INTEGRATED SILICON SOLUTIONS INC
ISSI
ISSI(Integrated Silicon Solution)
ISSI, Integrated Silicon Solution Inc
Lumissil

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