X-On Electronics has gained recognition as a prominent supplier of IS61VPS204836B-200TQLI SRAM across the USA, India, Europe, Australia, and various other global locations. IS61VPS204836B-200TQLI SRAM are a product manufactured by ISSI. We provide cost-effective solutions for SRAM, ensuring timely deliveries around the world.

IS61VPS204836B-200TQLI ISSI

IS61VPS204836B-200TQLI electronic component of ISSI
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Part No.IS61VPS204836B-200TQLI
Manufacturer: ISSI
Category: SRAM
Description: SRAM Chip Sync Quad 2.5V 72M-bit 2M x 36 3.1ns 100-Pin TQFP
Datasheet: IS61VPS204836B-200TQLI Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
72: USD 135.4738 ea
Line Total: USD 9754.11 
Availability - 0
MOQ: 72  Multiples: 72
Pack Size: 72
Availability Price Quantity
0
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 72
Multiples : 72
72 : USD 135.4738

   
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RoHS - XON
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We are delighted to provide the IS61VPS204836B-200TQLI from our SRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IS61VPS204836B-200TQLI and other electronic components in the SRAM category and beyond.

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IS61LPS409618B, IS61LPS204836B, IS61LPS204832B, IS64LPS204836B, IS61VPS/VVPS409618B, IS61VPS/VVPS204836B 2M x 36, 2M x 32, 4M x 18 72 Mb SYNCHRONOUS PIPELINED, OCTOBER 2017 SINgLE CYCLE DESELECT STATIC RAM FEATURES DESCRIPTION The 72Mb product family features high-speed, low-power Inter nal self-timed wr ite cycle synchronous static RAMs designed to provide burstable, Individual Byte Wr ite Control and Global Wr ite high-perfor mance memor y for communication and net- wor king applications. The IS61LPS/VPS204836B and Clock controlled, registered address, data and IS64LPS204836B are organized as 2,096,952 words by control 36 bits. The IS61LPS204832B is organized as 2,096,952 Burst sequence control using MODE input words by 32 bits. The IS61LPS/VPS409618B is organized as 4,193,904 words by 18 bits. Fabr icated with ISSI s Three chip enable option for simple depth ex- advanced CMOS technology, the device integrates a pansion and address pipelining 2-bit burst counter, high-speed SRAM core, and high- dr ive capability outputs into a single monolithic circuit. All Common data inputs and data outputs synchronous inputs pass through registers controlled by Auto Power-down dur ing deselect a positive-edge-tr iggered single clock input. Single cycle deselect Wr ite cycles are inter nally self-timed and are initiated by the r ising edge of the clock input. Wr ite cycles can be Snooze MODE for reduced-power standby one to four bytes wide as controlled by the wr ite control JTAG Boundar y Scan for PBGA package inputs. Separate byte enables allow individual bytes to be wr itten. Power Supply The byte wr ite operation is perfor med by using the byte LPS: Vdd 3.3V (+ 5%), Vddq 3.3V/2.5V (+ 5%) wr ite enable (BWE) input combined with one or more individual byte wr ite signals (BWx). In addition, Global VPS: Vdd 2.5V (+ 5%), Vddq 2.5V (+ 5%) Wr ite (GW) is available for wr iting all bytes at one time, VVPS: Vdd 1.8V (+ 5%), Vddq 1.8V (+ 5%) regardless of the byte wr ite controls. JEDEC 100-Pin TQFP, 119-ball PBGA, and Bursts can be initiated with either ADSP (Address Status 165-ball PBGA packages Processor) or ADSC (Address Status Cache Controller) input pins. Subsequent burst addresses can be gener- Lead-free available ated inter nally and controlled by the ADV (burst address advance) input pin. The mode pin is used to select the burst sequence or- der, Linear burst is achieved when this pin is tied LOW. Inter leave burst is achieved when this pin is tied HIGH or left floating. FAST ACCESS TIME Symbol Parameter 250 200 166 Units tkq Clock Access Time 2.8 3.1 3.8 ns tkc Cycle Time 4 5 6 ns Frequency 250 200 166 MHz Copyright 2017 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that: a.) the risk of injury or damage has been minimized b.) the user assume all such risks and c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances Integrated Silicon Solution, Inc. www.issi.com 1-800-379-4774 1 Rev. D 10/23/2017IS61LPS409618B, IS61LPS204836B, IS61LPS204832B, IS64LPS204836B, IS61VPS/VVPS409618B, IS61VPS/VVPS204836B BLOCK DIAGRAM MODE A0 A0 CLK Q0 BINARY /CKE COUNTER A1 A1 Q1 /ADV /CE /ADSC /CLR /ADSP 2Mx36 4Mx18 D Q Memory Array A0-x ADDRESS x18: x=21 REGISTER x36: x=20 /CE CLK /GW D Q /BWE DQ(a-d) BYTE WRITE /BW(a-x) REGISTERS x18:x=b, INPUT x32,x36:x=d REGISTER CLK /CE D Q CE2 CLK ENABLE /CE2 OUTPUT REGISTERS DQ(a-x) REGISTER x18:x=b, x32,x36:x=d CLK CLK Power ZZ Down D Q ENABLE DELAY REGISTERS CLK /OE 2 Integrated Silicon Solution, Inc. www.issi.com 1-800-379-4774 Rev. D 10/23/2017

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
Integrated Silicon Solution ()
Integrated Silicon Solution (ISSI)
INTEGRATED SILICON SOLUTIONS INC
ISSI
ISSI(Integrated Silicon Solution)
ISSI, Integrated Silicon Solution Inc
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