Product Information

IS61WV3216DBLL-10TLI

IS61WV3216DBLL-10TLI electronic component of ISSI

Datasheet
Memory; SRAM; 32kx16bit; 2.4÷3.6V; 10ns; TSOP44 II; -40÷85°C

Manufacturer: ISSI
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.4615 ea
Line Total: USD 3.4615

121 - Global Stock
Ships to you between
Thu. 11 Apr to Mon. 15 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
121 - Global Stock


Ships to you between Thu. 11 Apr to Mon. 15 Apr

MOQ : 1
Multiples : 1
1 : USD 3.4615
10 : USD 3.1165
100 : USD 2.737
270 : USD 2.576
1080 : USD 2.5185
2565 : USD 2.507
5130 : USD 2.461
10125 : USD 2.438

     
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IS61WV3216DBLL/DBLS IS64WV3216DBLL/DBLS 32K x 16 HIGH SPEED ASYNCHRONOUS MARCH 2020 CMOS STATIC RAM DESCRIPTION FEATURES The ISSI IS61WV3216DBLx and IS64WV3216DBLx HIGH SPEED: (IS61/64WV3216DBLL) are high-speed, 524,288-bit static RAMs organized as High-speed access time: 8, 10, 12, 20 ns 32,768 words by 16 bits. It is fabricated using ISSI s high- Low Active Power: 135 mW (typical) performance CMOS technology. This highly reliable process Low Standby Power: 12 W (typical) coupled with innovative circuit design techniques, yields CMOS standby high-performance and low power consumption devices. LOW POWER: (IS61/64WV3216DBLS) When CE is HIGH (deselected), the device assumes a High-speed access time: 25, 35 ns standby mode at which the power dissipation can be re- Low Active Power: 55 mW (typical) duced down with CMOS input levels. Low Standby Power: 12 W (typical) CMOS standby Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Single power supply Write Enable (WE) controls both writing and reading of the Vdd 2.4V to 3.6V (IS61/64WV3216DBxx) memory. A data byte allows Upper Byte (UB) and Lower Fully static operation: no clock or refresh Byte (LB) access. required Three state outputs The IS61WV3216DBLx and IS64WV3216DBLx are pack- aged in the JEDEC standard 44-pin TSOP Type II and Data control for upper and lower bytes 48-pin Mini BGA (6mm x 8mm). Industrial and Automotive temperature support Lead-free available FUNCTIONAL BLOCK DIAGRAM 32K x 16 A0-A14 DECODER MEMORY ARRAY VDD GND I/O0-I/O7 I/O Lower Byte COLUMN I/O DATA CIRCUIT I/O8-I/O15 Upper Byte CE OE CONTROL WE CIRCUIT UB LB Copyright 2020 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the lat- est version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reason- ably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that: a.) the risk of injury or damage has been minimized b.) the user assume all such risks and c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances Integrated Silicon Solution, Inc. www.issi.com 1 Rev. B1 03/04/2020IS61WV3216DBLL/DBLS, IS64WV3216DBLL/DBLS TRUTH TABLE I/O PIN Mode WE CE OE LB UB I/O0-I/O7 I/O8-I/O15 VDD Current Not Selected X H X X X High-Z High-Z Isb 1, Isb 2 Output Disabled H L H X X High-Z High-Z Icc X L X H H High-Z High-Z Read H L L L H d out High-Z Icc H L L H L High-Z d out H L L L L d out d out Write L L X L H d In High-Z Icc L L X H L High-Z d In L L X L L d In d In PIN CONFIGURATIONS 44-Pin TSOP-II PIN DESCRIPTIONS A0-A14 Address Inputs I/O0-I/O15 Data Inputs/Outputs 44 A0 NC 1 CE Chip Enable Input 43 A1 A14 2 OE Output Enable Input 42 A2 A13 3 41 OE A12 4 WE Write Enable Input 40 UB A11 5 LB Lower-byte Control (I/O0-I/O7) 39 LB CE 6 UB Upper-byte Control (I/O8-I/O15) 38 I/O15 I/O0 7 37 I/O14 I/O1 8 NC No Connection 36 I/O13 I/O2 9 Vdd Power 35 I/O12 I/O3 10 GND Ground 34 GND VDD 11 33 VDD GND 12 32 13 I/O11 I/O4 31 I/O10 I/O5 14 30 I/O9 I/O6 15 29 I/O8 I/O7 16 28 NC WE 17 27 A3 A10 18 26 A4 A9 19 25 A8 20 A5 24 A6 A7 21 23 NC NC 22 2 Integrated Silicon Solution, Inc. www.issi.com Rev. B1 03/04/2020

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
Integrated Silicon Solution
Integrated Silicon Solution ()
Integrated Silicon Solution (ISSI)
INTEGRATED SILICON SOLUTIONS INC
ISSI
ISSI(Integrated Silicon Solution)
ISSI, Integrated Silicon Solution Inc
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