Product Information


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SRAM Chip Async Single 3.3V 256K-bit 32K x 8 20ns 28-Pin SOJ

Manufacturer: ISSI
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 1.8804 ea
Line Total: USD 1.8804

38 - Global Stock
Ships to you between
Wed. 21 Jun to Fri. 23 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
38 - Global Stock

Ships to you between Wed. 21 Jun to Fri. 23 Jun

MOQ : 1
Multiples : 1
1 : USD 1.8225
10 : USD 1.638
100 : USD 1.3625
500 : USD 1.308
1000 : USD 1.296
2500 : USD 1.284
5000 : USD 1.26
10000 : USD 1.224

Product Category
Memory Size
256 kb it
32 K X 8
Access Time
20 ns
Interface Type
Supply Voltage - Max
3.63 V
Supply Voltage - Min
2.97 V
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Mounting Style
Package / Case
SOJ - 28
Supply Current - Max
5 mA
Data Rate
Memory Type
Factory Pack Quantity :
Number Of Ports
Hts Code
Product Type
Memory & Data Storage
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IS65LV256AL IS62LV256AL 32K x 8 LOW VOLTAGE FEBRUARY 2020 CMOS STATIC RAM FEATURES DESCRIPTION The ISSI IS62/65LV256AL is a very high-speed, low power, High-speed access time: 20, 45 ns 32,768-word by 8-bit static RAM. It is fabricated using ISSI s Automatic power-down when chip is deselected high-performance CMOS technology. This highly reliable CMOS low power operation process coupled with innovative circuit design techniques, yields access times as fast as 15 ns maximum. 17 W (typical) CMOS standby 50 mW (typical) operating When CE is HIGH (deselected), the device assumes a TTL compatible interface levels standby mode at which the power dissipation is reduced to 150 W (typical) with CMOS input levels. Single 3.3V power supply Fully static operation: no clock or refresh Easy memory expansion is provided by using an active required LOW Chip Enable (CE). The active LOW Write Enable Three-state outputs (WE) controls both writing and reading of the memory. Industrial and Automotive temperatures available The IS62/65LV256AL is available in the JEDEC standard Lead-free available 28-pin SOJ, 28-pin SOP, and the 28-pin TSOP (Type I) package. FUNCTIONAL BLOCK DIAGRAM 32K x 8 A0-A14 DECODER MEMORY ARRAY VDD GND I/O COLUMN I/O I/O0-I/O7 DATA CIRCUIT CE CONTROL OE CIRCUIT WE Copyright 2020 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that: a.) the risk of injury or damage has been minimized b.) the user assume all such risks and c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances Integrated Silicon Solution, Inc. 1-800-379-4774 1 Rev. D2 02/07/2020IS65LV256AL IS62LV256AL PIN CONFIGURATION PIN CONFIGURATION 28-Pin SOJ/ 28-pin SOP 28-Pin TSOP A14 1 28 VDD OE 22 21 A10 A12 2 27 WE 20 CE A11 23 A7 3 26 A13 A9 24 19 I/O7 A6 4 25 A8 A8 25 18 I/O6 A5 5 24 A9 A13 26 17 I/O5 WE 27 16 I/O4 A4 6 23 A11 VDD 28 15 I/O3 A3 7 22 OE A14 1 14 GND A2 8 21 A10 A12 2 13 I/O2 A1 9 20 CE A7 3 12 I/O1 A0 10 19 I/O7 A6 4 11 I/O0 I/O0 11 18 I/O6 A5 5 10 A0 I/O1 12 17 I/O5 A4 6 9 A1 A3 7 8 A2 I/O2 13 16 I/O4 GND 14 15 I/O3 TRUTH TABLE PIN DESCRIPTIONS Mode WE CE OE I/O Operation VDD Current A0-A14 Address Inputs Not Selected X H X High-Z Isb 1, Isb 2 CE Chip Enable Input (Power-down) OE Output Enable Input Output Disabled H L H High-Z Icc 1, Icc 2 WE Write Enable Input Read H L L d out Icc 1, Icc 2 I/O0-I/O7 Input/Output Write L L X d In Icc 1, Icc 2 Vdd Power GND Ground (1) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit Vterm Terminal Voltage with Respect to GND 0.5 to +4.6 V t Ib as Temperature Under Bias 55 to +125 C t stg Storage Temperature 65 to +150 C Pt Power Dissipation 0.5 W Iout DC Output Current (LOW) 20 mA Note: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause perma- nent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2 Integrated Silicon Solution, Inc. 1-800-379-4774 Rev. D2 02/07/2020

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
Integrated Silicon Solution
Integrated Silicon Solution ()
Integrated Silicon Solution (ISSI)
ISSI(Integrated Silicon Solution)
ISSI, Integrated Silicon Solution Inc