Product Information

IS62WV102416FBLL-45BLI

IS62WV102416FBLL-45BLI electronic component of ISSI

Datasheet
SRAM 16Mb 45ns 1Mx16 Async SRAM 2.2V-3.6V

Manufacturer: ISSI
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

480: USD 8.1101 ea
Line Total: USD 3892.85

0 - Global Stock
MOQ: 480  Multiples: 480
Pack Size: 480
Availability Price Quantity
0 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 480
Multiples : 480
480 : USD 9.3717

     
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RoHS - XON
Icon ROHS
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IS62WV102416FALL/BLL IS65WV102416FALL/BLL AUGUST 2017 1Mx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION KEY FEATURES The ISSI IS62/65WV102416FALL/FBLL are high-speed, low power, 16M bit static RAMs organized as 1024K words High-speed access time: 45ns, 55ns by 16 bits. It is fabricated using ISSI s high-performance CMOS low power operation CMOS technology. Operating Current: 35mA (max.) This highly reliable process coupled with innovative circuit CMOS standby Current: 5.5uA (typ.) design techniques, yields high-performance and low power consumption devices. When CS1 is HIGH (deselected) or TTL compatible interface levels when CS2 is LOW (deselected) or when CS1 is LOW, Single power supply CS2 is HIGH and both LB and UB are HIGH, the device 1.65V-2.2V VDD (IS62/65WV102416FALL) assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. 2.2V-3.6V VDD (IS62/65WV102416FBLL) Easy memory expansion is provided by using Chip Enable Three state outputs and Output Enable inputs. The active LOW Write Enable Commercial, Industrial and Automotive (WE ) controls both writing and reading of the memory. A temperature support data byte allows Upper Byte (UB ) and Lower Byte (LB ) access. Lead-free available The IS62/65WV102416FALL/FBLL are packaged in the JEDEC standard 48-pin mini BGA (6mm x 8mm) . FUNCTIONAL BLOCK DIAGRAM 1M x 16 MEMORY DECODER A0 A20 ARRAY VDD GND I/O0 I/O7 I/O Lower Byte COLUMN I/O DATA I/O8 I/O15 CIRCUIT Upper Byte CS2 CS1 CONTROL OE CIRCUIT WE UB LB Copyright 2017 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that: a.) the risk of injury or damage has been minimized b.) the user assume all such risks and c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances Integrated Silicon Solution, Inc.- www.issi.com 1 Rev. A3 08/22/2017 IS62WV102416FALL/BLL IS65WV102416FALL/BLL PIN CONFIGURATIONS 48-Pin mini BGA (6mm x 8mm) 1 2 3 4 5 6 A LB OE A0 A1 A2 CS2 B I/O8 UB A3 A4 CS1 I/O0 C I/O9 I/O10 A5 A6 I/O1 I/O2 D VSS I/O11 A17 A7 I/O3 VDD E VDD I/O12 NC A16 I/O4 VSS F I/O14 I/O13 A14 A15 I/O5 I/O6 G I/O15 A19 A12 A13 WE I/O7 H A18 A8 A9 A10 A11 NC PIN DESCRIPTIONS A0-A20 Address Inputs I/O0-I/O15 Data Inputs/Outputs CS1 , CS2 Chip Enable Inputs OE Output Enable Input WE Write Enable Input LB Lower-byte Control (I/O0-I/O7) UB Upper-byte Control (I/O8-I/O15) NC No Connection VDD Power VSS Ground Integrated Silicon Solution, Inc.- www.issi.com 2 Rev. A3 08/22/2017

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
Integrated Silicon Solution
Integrated Silicon Solution ()
Integrated Silicon Solution (ISSI)
INTEGRATED SILICON SOLUTIONS INC
ISSI
ISSI(Integrated Silicon Solution)
ISSI, Integrated Silicon Solution Inc
Lumissil

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