Product Information

IS63WV1024BLL-12BLI

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Datasheet
ISSI SRAM 1M (128Kx8) 12ns Async SRAM 3.3v

Manufacturer: ISSI
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.8928 ea
Line Total: USD 4.464

102 - Global Stock
Ships to you between
Fri. 02 Jun to Thu. 08 Jun
MOQ: 5  Multiples: 1
Pack Size: 1
Availability Price Quantity
102 - Global Stock


Ships to you between Fri. 02 Jun to Thu. 08 Jun

MOQ : 1
Multiples : 1
1 : USD 1.0596
10 : USD 1.048
25 : USD 1.0376
100 : USD 1.0338
250 : USD 1.0286
480 : USD 1.0164
960 : USD 0.996
2880 : USD 0.996
5280 : USD 0.996

260 - Global Stock


Ships to you between Thu. 08 Jun to Mon. 12 Jun

MOQ : 1
Multiples : 1
1 : USD 3.4936
10 : USD 2.9682
25 : USD 2.9198
100 : USD 2.6775
250 : USD 2.489
480 : USD 2.4657
960 : USD 2.2912
2880 : USD 2.2448
5280 : USD 2.1866

102 - Global Stock


Ships to you between Fri. 02 Jun to Thu. 08 Jun

MOQ : 5
Multiples : 1
5 : USD 0.8928
10 : USD 0.8843
25 : USD 0.8754
100 : USD 0.8737
250 : USD 0.87
480 : USD 0.8609
960 : USD 0.8437

     
Manufacturer
ISSI
Product Category
SRAM
Memory Size
1 Mbit
Access Time
12 ns
Maximum Clock Frequency
-
Interface Type
Parallel
Supply Voltage - Max
3.63 V
Supply Voltage - Min
2.97 V
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Package / Case
BGA - 48
Packaging
Tray
Supply Current - Max
45 mA
Organisation
128 k x 8
Hts Code
8542320041
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IS63WV1024BLL IS64WV1024BLL 128K x 8 HIGH-SPEED CMOS STATIC RAM MAY 2012 FEATURES DESCRIPTION High-speed access time: The ISSI IS63/64WV1024BLL is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM. The 12 ns: 3.3V + 10% IS63/64WV1024BLL is fabricated using ISSI s 15 ns: 2.5V 3.6V high-performance CMOS technology. This highly reliable High-performance, low-power CMOS process process coupled with innovative circuit design CMOS Low Power Operation techniques, yields higher performance and low power 50 mW (typical) operating current consumption devices. 25 W (typical) standby current When CE is HIGH (deselected), the device assumes a Multiple center power and ground pins for standby mode at which the power dissipation can be greater noise immunity reduced down to 25 W (typical) with CMOS input levels. Easy memory expansion with CE and OE options The IS63/64WV1024BLL operates from a single VDD power supply. The IS63/64WV1024BLL is available in CE power-down 32-pin TSOP (Type II), 32-pin sTSOP (Type I), 48-Ball Fully static operation: no clock or refresh miniBGA (6mm x 8mm), and 32-pin SOJ (300-mil) required packages. TTL compatible inputs and outputs Packages available: 32-pin TSOP (Type II) 32-pin sTSOP (Type I) 48-Ball miniBGA (6mm x 8mm) 32-pin 300-mil SOJ Lead-free available FUNCTIONAL BLOCK DIAGRAM 128K X 8 A0-A16 DECODER MEMORY ARRAY VDD GND I/O COLUMN I/O I/O0-I/O7 DATA CIRCUIT CE CONTROL OE CIRCUIT WE Copyright 2012 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that: a.) the risk of injury or damage has been minimized b.) the user assume all such risks and c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances Integrated Silicon Solution, Inc. www.issi.com 1-800-379-4774 1 Rev. D 05/09/12IS63WV1024BLL IS64WV1024BLL PIN CONFIGURATION PIN CONFIGURATION 32-Pin SOJ 32-Pin TSOP (Type II) (T) 32-Pin sTSOP (Type I) (H) A0 1 32 A16 A1 2 31 A15 A0 1 32 A16 A2 3 30 A14 A1 2 31 A15 A3 4 29 A13 A2 3 30 A14 CE 5 28 OE A3 4 29 A13 CE 5 28 OE I/O0 6 27 I/O7 I/O0 6 27 I/O7 I/O1 7 26 I/O6 I/O1 7 26 I/O6 VDD 8 25 GND VDD 8 25 GND GND 9 24 VDD GND 9 24 VDD I/O2 10 23 I/O5 I/O2 10 23 I/O5 I/O3 11 22 I/O4 I/O3 11 22 I/O4 WE 12 21 A12 WE 12 21 A12 A4 13 20 A11 A5 14 19 A10 A4 13 20 A11 A6 15 18 A9 A5 14 19 A10 A7 16 17 A8 A6 15 18 A9 A7 16 17 A8 PIN DESCRIPTIONS PIN CONFIGURATION 48-mini BGA (B) (6 mm x 8 mm) A0-A16 Address Inputs CE Chip Enable Input 1 2 3 4 5 6 OE Output Enable Input WE Write Enable Input I/O0-I/O7 Bidirectional Ports VDD Power A2 A6 A7 A NC OE NC GND Ground I/O NC A1 A5 B 1 CE I/O8 I/O NC A0 A4 NC I/O C 2 7 GND NC NC A3 NC VDD D VDD NC NC NC NC GND E I/O3 NC A14 A11 I/O5 I/O F 6 A15 I/O NC A12 WE A8 G 4 NC A10 A16 A13 A9 NC H 2 Integrated Silicon Solution, Inc. www.issi.com 1-800-379-4774 Rev. D 05/09/12

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
Integrated Silicon Solution
Integrated Silicon Solution ()
Integrated Silicon Solution (ISSI)
INTEGRATED SILICON SOLUTIONS INC
ISSI
ISSI(Integrated Silicon Solution)
ISSI, Integrated Silicon Solution Inc
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