Product Information

IS63WV1288DBLL-10JLI

IS63WV1288DBLL-10JLI electronic component of ISSI

Datasheet
SRAM 1Mb,High-Speed/Low Power,Async,128K x 8,8ns/3.3v or 10ns/2.4v-3.6v, 32 Pin SOJ (300 mil), RoHS

Manufacturer: ISSI
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.1633 ea
Line Total: USD 3.1633

21 - Global Stock
Ships to you between
Tue. 17 Oct to Thu. 19 Oct
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
329 - Global Stock


Ships to you between Wed. 11 Oct to Tue. 17 Oct

MOQ : 1
Multiples : 1
1 : USD 4.5388
10 : USD 4.3231
25 : USD 4.1728
50 : USD 4.0893
100 : USD 4.0893
500 : USD 4.0893

21 - Global Stock


Ships to you between Tue. 17 Oct to Thu. 19 Oct

MOQ : 1
Multiples : 1
1 : USD 3.1633
10 : USD 2.6748
100 : USD 2.3117
250 : USD 2.1147
500 : USD 2.0914
1000 : USD 2.0682
2500 : USD 2.045
5000 : USD 1.9868
10000 : USD 1.952

329 - Global Stock


Ships to you between Wed. 11 Oct to Tue. 17 Oct

MOQ : 4
Multiples : 1
4 : USD 4.5388
10 : USD 4.3231
25 : USD 4.1728
50 : USD 4.0893

     
Manufacturer
ISSI
Product Category
SRAM
Memory Size
1 Mbit
Access Time
10 ns
Maximum Clock Frequency
-
Interface Type
Parallel
Supply Voltage - Max
3.6 V
Supply Voltage - Min
2.4 V
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Package / Case
SOJ - 32
Supply Current - Max
55 mA
Organisation
128 k x 8
Hts Code
8542320041
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IS63WV1288DALL/DALS IS63WV1288DBLL/DBLS IS64WV1288DBLL/DBLS JUNE 2021 128K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES DESCRIPTION HIGH SPEED: (IS63/64WV1288DALL/DBLL) The ISSI IS63/64WV1288Dxxx is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM. High-speed access time: 8, 10, 12, 20 ns The IS63/64WV1288DBLL is fabricated using ISSI s Low Active Power: 135 mW (typical) high-performance CMOS technology. This highly reliable Low Standby Power: 12 W (typical) process coupled with innovative circuit design CMOS standby techniques, yields higher performance and low power LOW POWER: (IS63/64WV1288DALS/DBLS) consumption devices. High-speed access time: 25, 35 ns When CE is HIGH (deselected), the device assumes a Low Active Power: 55 mW (typical) standby mode at which the power dissipation can be re- duced down to 25 W (typical) with CMOS input levels. Low Standby Power: 12 W (typical) CMOS standby The IS63/64WV1288DBLL operates from a single Vdd Single power supply power supply. The IS63/64WV1288Dxxx is available in 32-pin TSOP (Type II), 32-pin sTSOP (Type I), 48-Ball Vdd 1.65V to 2.2V (IS63WV1288DAxx) miniBGA (6mm x 8mm) and 32-pin SOJ (300-mil) pack- Vdd 2.4V to 3.6V (IS63/64WV1288DBxx) ages. Multiple center power and ground pins for greater noise immunity Easy memory expansion with CE and OE options CE power-down Fully static operation: no clock or refresh required TTL compatible inputs and outputs Lead-free available FUNCTIONAL BLOCK DIAGRAM 128K X 8 A0-A16 DECODER MEMORY ARRAY VDD GND I/O COLUMN I/O I/O0-I/O7 DATA CIRCUIT CE CONTROL OE CIRCUIT WE Copyright 2021 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be ex- pected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that: a.) the risk of injury or damage has been minimized b.) the user assume all such risks and c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances Integrated Silicon Solution, Inc. www.issi.com 1-800-379-4774 1 Rev. B2 06/28/2021IS63WV1288DALL/DALS IS63WV1288DBLL/DBLS IS64WV1288DBLL/DBLS PIN CONFIGURATION PIN CONFIGURATION 32-Pin SOJ 32-Pin TSOP (Type II) (T) 32-Pin sTSOP (Type I) (H) A0 1 32 A16 A1 2 31 A15 A0 1 32 A16 A2 3 30 A14 A1 2 31 A15 A3 4 29 A13 A2 3 30 A14 CE 5 28 OE A3 4 29 A13 CE 5 28 OE I/O0 6 27 I/O7 I/O0 6 27 I/O7 I/O1 7 26 I/O6 I/O1 7 26 I/O6 VDD 8 25 GND VDD 8 25 GND GND 9 24 VDD GND 9 24 VDD I/O2 10 23 I/O5 I/O2 10 23 I/O5 I/O3 11 22 I/O4 I/O3 11 22 I/O4 WE 12 21 A12 WE 12 21 A12 A4 13 20 A11 A5 14 19 A10 A4 13 20 A11 A6 15 18 A9 A5 14 19 A10 A7 16 17 A8 A6 15 18 A9 A7 16 17 A8 PIN DESCRIPTIONS PIN CONFIGURATION 48-mini BGA (B) (6 mm x 8 mm) A0-A16 Address Inputs CE Chip Enable Input 1 2 3 4 5 6 OE Output Enable Input WE Write Enable Input I/O0-I/O7 Bidirectional Ports Vdd Power GND Ground A2 A6 A7 A NC OE NC NC A1 A5 I/O CE I/O B 0 7 I/O NC A0 A4 NC I/O 1 6 C GND NC A3 D NC NC VDD VDD NC NC NC NC GND E I/O NC A14 A11 I/O I/O F 2 4 5 I/O NC A15 A12 WE A8 G 3 NC A10 A16 A13 A9 NC H 2 Integrated Silicon Solution, Inc. www.issi.com Rev. B2 06/28/2021

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
Integrated Silicon Solution
Integrated Silicon Solution ()
Integrated Silicon Solution (ISSI)
INTEGRATED SILICON SOLUTIONS INC
ISSI
ISSI(Integrated Silicon Solution)
ISSI, Integrated Silicon Solution Inc
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