Product Information

IS64C6416AL-15TLA3-TR

IS64C6416AL-15TLA3-TR electronic component of ISSI

Datasheet
SRAM Chip Async Single 5V 1M-bit 64K x 16 15ns Automotive 44-Pin TSOP-II T/R

Manufacturer: ISSI
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1000: USD 3.9725 ea
Line Total: USD 3972.5

0 - Global Stock
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
0 - Global Stock


Ships to you between Thu. 04 Apr to Wed. 10 Apr

MOQ : 1000
Multiples : 1000
1000 : USD 3.9725
2000 : USD 3.8825

0 - Global Stock


Ships to you between Thu. 04 Apr to Wed. 10 Apr

MOQ : 1000
Multiples : 1000
1000 : USD 4.05

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
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Access Time
Supply Voltage - Max
Supply Voltage - Min
Maximum Operating Temperature
Minimum Operating Temperature
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IS61C6416AL IS64C6416AL IS62C6416AL IS65C6416AL ISSI 64K x 16 HIGH-SPEED CMOS STATIC RAM JUNE 2005 FEATURES DESCRIPTION The ISSI IS61C6416AL, IS62C6416AL, IS64C6416AL and IS61C6416AL and IS64C6416AL IS65C6416AL are high-speed, 1,048,576-bit static RAMs High-speed access time: 12 ns, 15ns organized as 65,536 words by 16 bits. They are fabricated Low Active Power: 175 mW (typical) using ISSI s high-performance CMOS technology. This highly reliable process coupled with innovative circuit design tech- Low Standby Power: 1 mW (typical) niques, yields access times as fast as 12 ns with low power CMOS standby consumption. IS62C6416AL and IS65C6416AL High-speed access time: 35 ns, 45ns When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced Low Active Power: 50 mW (typical) down with CMOS input levels. Low Standby Power: 100 W (typical) CMOS standby Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write TTL compatible interface levels Enable (WE) controls both writing and reading of the memory. Single 5V 10% power supply A data byte allows Upper Byte (UB) and Lower Byte (LB) Fully static operation: no clock or refresh access. required The IS61C6416AL, IS62C6416AL, IS64C6416AL and Available in 44-pin SOJ package and IS65C6416AL are packaged in the JEDEC standard 44-pin 44-pin TSOP (Type II) 400-mil SOJ and 44-pin TSOP (Type II). Commercial, Industrial and Automotive tempera- ture ranges available Lead-free available FUNCTIONAL BLOCK DIAGRAM 64K x 16 A0-A15 DECODER MEMORY ARRAY VDD GND I/O0-I/O7 I/O Lower Byte COLUMN I/O DATA CIRCUIT I/O8-I/O15 Upper Byte CE OE CONTROL WE CIRCUIT UB LB Copyright 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. www.issi.com 1-800-379-4774 1 Rev. B 06/08/05 IS61C6416AL IS64C6416AL ISSI IS62C6416AL IS65C6416AL PIN CONFIGURATIONS 44-Pin TSOP (Type II) 44-Pin SOJ A15 1 44 A0 A15 1 44 A0 A14 2 43 A1 A14 2 43 A1 A13 3 42 A2 A13 3 42 A2 A12 4 41 OE A12 4 41 OE A11 5 40 UB A11 5 40 UB CE 6 39 LB CE 6 39 LB I/O0 7 38 I/O15 I/O0 7 38 I/O15 I/O1 8 37 I/O14 I/O1 8 37 I/O14 I/O2 9 36 I/O13 I/O2 9 36 I/O13 I/O3 10 35 I/O12 I/O3 10 35 I/O12 VDD 11 34 GND VDD 11 34 GND GND 12 33 VDD GND 12 33 VDD I/O4 13 32 I/O11 I/O4 13 32 I/O11 I/O5 14 31 I/O10 I/O5 14 31 I/O10 I/O6 15 30 I/O9 I/O6 15 30 I/O9 I/O7 16 29 I/O8 I/O7 16 29 I/O8 WE 17 28 NC WE 17 28 NC A10 18 27 A3 A10 18 27 A3 A9 19 26 A4 A9 19 26 A4 A8 20 25 A5 A8 20 25 A5 A7 21 24 A6 A7 21 24 A6 NC 22 23 NC NC 22 23 NC PIN DESCRIPTIONS A0-A15 Address Inputs LB Lower-byte Control (I/O0-I/O7) I/O0-I/O15 Data Inputs/Outputs UB Upper-byte Control (I/O8-I/O15) CE Chip Enable Input NC No Connection OE Output Enable Input VDD Power WE Write Enable Input GND Ground 2 Integrated Silicon Solution, Inc. www.issi.com 1-800-379-4774 Rev. B 06/08/05

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
Integrated Silicon Solution
Integrated Silicon Solution ()
Integrated Silicon Solution (ISSI)
INTEGRATED SILICON SOLUTIONS INC
ISSI
ISSI(Integrated Silicon Solution)
ISSI, Integrated Silicon Solution Inc
Lumissil

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