CPC3902 250V N-Channel Depletion-Mode FET INTEGRATED CIRCUITS DIVISION BV / R I (min) Package Description DSX DS(on) DSS BV (max) DGX The CPC3902 is a 250V, N-channel, depletion-mode, 250V 2.5 400mA SOT-223 metal oxide semiconductor field effect transistor (MOSFET) built upon a proprietary third generation vertical DMOS process that realizes world-class, high voltage performance in an economical silicon Features gate process. This vertical DMOS process yields a High Breakdown Voltage: 250V robust device with high input impedance for power On-Resistance: 2.5 max. at 25C applications. Low V Voltage: -1.4 to -3.1V GS(off) High Input Impedance As with all MOS devices, the FET structure prevents Small Package Size: SOT-223 thermal runaway and thermal-induced secondary breakdown, which makes the CPC3902 ideal for use in high-power applications. Applications Current Regulator The CPC3902 is a highly reliable FET device that Normally-On Switches has been used extensively in IXYS Integrated Circuits Solid State Relays Divisions Solid State Relays for industrial and Converters telecommunications applications. Telecommunications Power Supply The CPC3902 is available in the SOT-223 package. Package Pinout Ordering Information D Part Description CPC3902ZTR SOT-223: Tape and Reel (1000/Reel) 4 123 Circuit Symbol G D S D G S DS-CPC3902-R04 1 www.ixysic.comINTEGRATED CIRCUITS DIVISION CPC3902 Absolute Maximum Ratings 25C Absolute Maximum Ratings are stress ratings. Stresses in Parameter Ratings Units excess of these ratings can cause permanent damage to the Drain-to-Source Voltage 250 V device. Functional operation of the device at conditions beyond Gate-to-Source Voltage 15 V those indicated in the operational sections of this data sheet is Pulsed Drain Current 400 mA 1 not implied. Total Package Dissipation 1.8 W Operational Temperature -55 to +110 C Typical values are characteristic of the device at +25C, and Junction Temperature, Maximum +125 C are the result of engineering evaluations. They are provided for Storage Temperature -55 to +125 C information purposes only, and are not part of the manufacturing 1 testing requirements. Mounted on 1 x1 2 oz. Copper FR4 board. Thermal Characteristics Device Parameter Symbol Rating Units CPC3902Z (SOT-223) Junction to Case 14 JC C/W Junction to Ambient 55 JA Electrical Characteristics 25C (Unless Otherwise Noted) Parameter Symbol Conditions Min Typ Max Units Drain-to-Source Breakdown Voltage BV V = -5.5V, I =100A 250 - - V DSX GS D Gate-to-Source Off Voltage V V = 15V, I =1A -1.4 - -3.1 V GS(off) DS D Change in V with Temperature dV /dT V = 15V, I =1A - - 4.5 mV/C GS(off) GS(off) DS D Gate Body Leakage Current I V =15V, V =0V - - 100 nA GSS GS DS Drain-to-Source Leakage Current I V = -5.5V, V =250V - - 1 A D(off) GS DS Saturated Drain-to-Source Current I V = 0V, V =15V 400 - - mA DSS GS DS Static Drain-to-Source On-State Resistance R -- 2.5 DS(on) V = 0V, I =300mA, V =10V GS D DS Change in R with Temperature dR /dT - - 2.5 %/C DS(on) DS(on) Forward Transconductance G I = 200mA, V = 10V 400 - - mmho fs D DS Input Capacitance C 230 V = -3.5V ISS GS Common Source Output Capacitance C V = 20V - 16 -pF OSS DS f= 1MHz Reverse Transfer Capacitance C 9.5 RSS Source-Drain Diode Voltage Drop V V = -5V, I =150mA - 0.72 1 V SD GS SD 2 R04 www.ixysic.com