IXBOD1-25R IXYS

IXBOD1-25R electronic component of IXYS
IXBOD1-25R IXYS
IXBOD1-25R Sidacs
IXBOD1-25R  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of IXBOD1-25R Sidacs across the USA, India, Europe, Australia, and various other global locations. IXBOD1-25R Sidacs are a product manufactured by IXYS. We provide cost-effective solutions for Sidacs, ensuring timely deliveries around the world.

Part No. IXBOD1-25R
Manufacturer: IXYS
Category: Sidacs
Description: IXYS Sidacs 1 Amps 2500V
Datasheet: IXBOD1-25R Datasheet (PDF)
Price (USD)
20: USD 68.365 ea
Line Total: USD 1367.3 
Availability : 0
  
QtyUnit Price
20$ 68.365
100$ 68.354

Availability 0
Ship by Thu. 28 Aug to Mon. 01 Sep
MOQ : 20
Multiples : 20
QtyUnit Price
20$ 68.365
100$ 68.354


Availability 0
Ship by Thu. 28 Aug to Mon. 01 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 59.5689

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Non Repetitive On-State Current
On-State Voltage
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Minimum Operating Temperature
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Off-State Leakage Current Vdrm Idrm
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We are delighted to provide the IXBOD1-25R from our Sidacs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXBOD1-25R and other electronic components in the Sidacs category and beyond.

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Breakover Diodes Applications Transient voltage protection High-voltage switches Crowbar Lasers Pulse generators i I H I BO V V V BO H Application Note H - 6 Remark: For special selection of more than 2 pieces IXBOD 1-... for every break down voltage of V > 2000 V please contact us. BO 2000 IXYS All rights reserved H - 1IXBOD 1 -06...10 V = 600-1000V Single Breakover Diode BO I = 0.9 A AVM V Standard BO V Types A K 600 50 IXBOD 1 -06 700 50 IXBOD 1 -07 800 50 IXBOD 1 -08 900 50 IXBOD 1 -09 1000 50 IXBOD 1 -10 Symbol Conditions Ratings I T = 125C V = 0,8x V 20 A D VJ BO V V (T ) = V 1 + K (T - 25C) BO BO VJ BO, 25C T VJ I f = 50 HZ T = 50C1.4A RMS amb connection pins soldered to printed circuit (conductor 0,035x2mm) I 0.9 A AVM I t = 0.1 ms T = 50C non repetitive 200 A SM p amb 2 It t = 0.1 ms T = 50C2A s p amb T -40...+125 C amb T -40...+125 C stg T 125 C VJm Dimensions in mm (1 mm = 0.0394 ) -3 -1 K Temperatur coefficient of V 210 K T BO K coefficient for energy per pulse E (material constant) 700 K/Ws P P R - natural convection 60 K/W thJA - with air speed 2 m/s 45 K/W Weight 1g Symbol Conditions Characteristic Values I T =25C15mA BO VJ I T =25C30mA H VJ V T =25C 4 - 8 V H VJ (dv/dt) T =50C V = 0.67(V + 100V) > 1000 V/s C VJ D BO KA (di/dt) T = 125C V = V I = 80A f = 50 Hz 200 A/s C VJ D BO T t T = 125CV = 0.67V V = 0V 150 s q(typ) VJ D BO R dV/dt = 200V/s I = 80A di/dt = -10A/s (lin.) T V T =125C I = 5A 1.7 V T VJ T V For power-loss calculations only 1.1 V (TO) r T = 125C 0.12 T VJ IXYS reserve at these the right to change limits, test conditions and dimensions Data according to IEC 60747 2000 IXYS All rights reserved H - 2 030

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
IXS
IXYS
IXYS CORP
Ixys Corporation
IXYS INTEG.CIRCUITS DIV(CLARE)
IXYS Integrated Circuits
IXYS Integrated Circuits / Clare
IXYS Integrated Circuits Division
IXYS Integrated Circuits/Clare
IXYS RF
IXYS SEMICONDUCTOR
Littelfuse/IXYS
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