IXBOD1-32RD IXYS

Breakover Diodes Applications Transient voltage protection High-voltage switches Crowbar Lasers Pulse generators i I H I BO V V V BO H Application Note H - 6 Remark: For special selection of more than 2 pieces IXBOD 1-... for every break down voltage of V > 2000 V please contact us. BO 2000 IXYS All rights reserved H - 1IXBOD 1 -06...10 V = 600-1000V Single Breakover Diode BO I = 0.9 A AVM V Standard BO V Types A K 600 50 IXBOD 1 -06 700 50 IXBOD 1 -07 800 50 IXBOD 1 -08 900 50 IXBOD 1 -09 1000 50 IXBOD 1 -10 Symbol Conditions Ratings I T = 125C V = 0,8x V 20 A D VJ BO V V (T ) = V 1 + K (T - 25C) BO BO VJ BO, 25C T VJ I f = 50 HZ T = 50C1.4A RMS amb connection pins soldered to printed circuit (conductor 0,035x2mm) I 0.9 A AVM I t = 0.1 ms T = 50C non repetitive 200 A SM p amb 2 It t = 0.1 ms T = 50C2A s p amb T -40...+125 C amb T -40...+125 C stg T 125 C VJm Dimensions in mm (1 mm = 0.0394 ) -3 -1 K Temperatur coefficient of V 210 K T BO K coefficient for energy per pulse E (material constant) 700 K/Ws P P R - natural convection 60 K/W thJA - with air speed 2 m/s 45 K/W Weight 1g Symbol Conditions Characteristic Values I T =25C15mA BO VJ I T =25C30mA H VJ V T =25C 4 - 8 V H VJ (dv/dt) T =50C V = 0.67(V + 100V) > 1000 V/s C VJ D BO KA (di/dt) T = 125C V = V I = 80A f = 50 Hz 200 A/s C VJ D BO T t T = 125CV = 0.67V V = 0V 150 s q(typ) VJ D BO R dV/dt = 200V/s I = 80A di/dt = -10A/s (lin.) T V T =125C I = 5A 1.7 V T VJ T V For power-loss calculations only 1.1 V (TO) r T = 125C 0.12 T VJ IXYS reserve at these the right to change limits, test conditions and dimensions Data according to IEC 60747 2000 IXYS All rights reserved H - 2 030