TM HiPerFET V = 800V IXFB50N80Q2 DSS Power MOSFETs I = 50A D25 Q-Class R 160m DS(on) t 300ns rr N-Channel Enhancement Mode Avalanche Rated, Low Q , Low Intrinsic R g G High dV/dt, Low t rr PLUS264 Symbol Test Conditions Maximum Ratings V T = 25C to 150C 800 V DSS J V T = 25C to 150C, R = 1M 800 V DGR J GS V Continuous 30 V GSS G Tab D V Transient 40 V GSM S I T = 25C 50 A D25 C G = Gate D = Drain I T = 25C, Pulse Width Limited by T 200 A DM C JM S = Source Tab = Drain I T = 25C 50 A A C E T = 25C 5 J AS C Features dv/dt I I , V V , T 150C 20 V/ns S DM DD DSS J P T = 25C 1135 W Double Metal Process for Low Gate D C Resistance T -55 ... +150 C J Avalanche Rated T 150 C JM Low Package Inductance T -55 ... +150 C Fast Intrinsic Rectifier stg T 1.6mm (0.062 in.) from Case for 10s 300 C L Advantages T Plastic Body for 10s 260 C SOLD Weight 10 g Easy to Mount Space Savings High Power Density Applications Switch-Mode and Resonant-Mode Power Supplies >500kHz Switching DC-DC Converters DC Choppers Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. Pulse Generation J Laser Drivers BV V = 0V, I = 1mA 800 V DSS GS D V V = V , I = 8mA 3.0 5.5 V GS(th) DS GS D I V = 30V, V = 0V 200 nA GSS GS DS I V = V , V = 0V 50 A DSS DS DSS GS T = 125C 3 mA J R V = 10V, I = 0.5 I , Note 1 160 m DS(on) GS D D25 2010 IXYS CORPORATION, All Rights Reserved DS99005D(01/10) IXFB50N80Q2 Symbol Test Conditions Characteristic Values TM PLUS264 (IXFB) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 0.5 I , Note 1 32 48 S fs DS D D25 C 7200 pF iss C V = 0V, V = 25V, f = 1MHz 1200 pF oss GS DS C 230 pF rss t 26 ns d(on) Resistive Switching Times t 25 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 60 ns d(off) R = 1 (External) G t 13 ns f Q 260 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 56 nC gs GS DS DSS D D25 Q 120 nC gd R 0.11 C/W thJC R 0.13 C/W thCK Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 50 A S GS I Repetitive Pulse Width Limited by T 200 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS I = 25A, V = 0V t 300 ns F GS rr Q -di/dt = 100A/s 1.1 C RM I V = 100V 8.0 A RM R Note: 1. Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537