Advance Technical Information TM TM TrenchT2 HiperFET V = 75V IXFH400N075T2 DSS I = 400A Power MOSFET IXFT400N075T2 D25 R 2.3m DS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) G Symbol Test Conditions Maximum Ratings D D (Tab) S V T = 25C to 175C75 V DSS J V T = 25C to 175C, R = 1M 75 V DGR J GS V Continuous 20 V GSS V Transient 30 V TO-268 (IXFT) GSM I T = 25C (Chip Capability) 400 A D25 C G I Lead Current Limit, RMS 160 A LRMS S I T = 25C, Pulse Width Limited by T 1000 A DM C JM D (Tab) I T = 25C 200 A A C E T = 25C 1.5 J AS C G = Gate D = Drain dv/dt I I , V V , T 175C 15 V/ns S DM DD DSS J S = Source Tab = Drain P T = 25C 1000 W D C T -55 ... +175 C J Features T 175 C JM T -55 ... +175 C z stg International Standard Packages z T 1.6mm (0.062in.) from Case for 10s 300 C 175C Operating Temperature L z T Plastic Body for 10 seconds 260 C High Current Handling Capability sold z Avalanche Rated M Mounting Torque (TO-247) 1.13 / 10 Nm/lb.in. d z Fast Intrinsic Diode Weight TO-247 6 g z Low R DS(on) TO-268 4 g Symbol Test Conditions Characteristic Values Advantages (T = 25C Unless Otherwise Specified) Min. Typ. Max. J z Easy to Mount BV V = 0V, I = 1mA 75 V z DSS GS D Space Savings z High Power Density V V = V , I = 250A 2.0 4.0 V GS(th) DS GS D I V = 20V, V = 0V 200 nA GSS GS DS Applications I V = V , V = 0V 25 A DSS DS DSS GS T = 150C 1.5 mA z J DC/DC Converters and Off-line UPS z Primary- Side Switch R V = 10V, I = 100A, Notes 1 & 2 2.3 m DS(on) GS D z High Current Switching Applications 2009 IXYS CORPORATION, All Rights Reserved DS100221(12/09)IXFH400N075T2 IXFT400N075T2 Symbol Test Conditions Characteristic Values TO-247 (IXFH) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 60A, Note 1 80 130 S fs DS D C 24 nF iss P C V = 0V, V = 25V, f = 1MHz 2770 pF 1 2 3 oss GS DS C 455 pF rss R Gate Input Resistance 1.33 Gi t 35 ns d(on) Resistive Switching Times t 20 ns e r V = 10V, V = 0.5 V , I = 200A GS DS DSS D t 67 ns Terminals: 1 - Gate 2 - Drain d(off) R = 1 (External) 3 - Source Tab - Drain G t 44 ns f Dim. Millimeter Inches Min. Max. Min. Max. Q 420 nC g(on) A 4.7 5.3 .185 .209 Q V = 10V, V = 0.5 V , I = 0.5 I 114 nC A 2.2 2.54 .087 .102 gs GS DS DSS D D25 1 A 2.2 2.6 .059 .098 2 Q 130 nC gd b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 1 R 0.15 C/W thJC b 2.87 3.12 .113 .123 2 R TO-247 0.21 C/W C .4 .8 .016 .031 thCH D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 Source-Drain Diode L 19.81 20.32 .780 .800 L1 4.50 .177 Symbol Test Conditions Characteristic Values P 3.55 3.65 .140 .144 (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 I V = 0V 400 A S GS S 6.15 BSC 242 BSC I Repetitive, Pulse Width Limited by T 1200 A SM JM TO-268 (IXFT) Outline V I = 100A, V = 0V, Note 1 1.2 V F GS SD t 77 ns rr I = 100A, V = 0V F GS I 5.4 A -di/dt = 100A/s RM V = 37.5V Q R 210 nC RM Notes: 1. Pulse test, t 300s, duty cycle, d 2%. 2. Includes lead resistance. Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537