IXFH56N30X3 IXYS

IXFH56N30X3 electronic component of IXYS
IXFH56N30X3 IXYS
IXFH56N30X3 MOSFETs
IXFH56N30X3  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of IXFH56N30X3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IXFH56N30X3 MOSFETs are a product manufactured by IXYS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. IXFH56N30X3
Manufacturer: IXYS
Category: MOSFETs
Description: MOSFET DiscMSFT NChUltrJnctn X3Class TO-247AD
Datasheet: IXFH56N30X3 Datasheet (PDF)
Price (USD)
1: USD 12.614 ea
Line Total: USD 12.61 
Availability : 228
  
Ship by Wed. 17 Sep to Fri. 19 Sep
QtyUnit Price
1$ 12.614
2$ 10.374
6$ 9.814
30$ 9.422

Availability 228
Ship by Wed. 17 Sep to Fri. 19 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 12.614
2$ 10.374
6$ 9.814
30$ 9.422

   
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We are delighted to provide the IXFH56N30X3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXFH56N30X3 and other electronic components in the MOSFETs category and beyond.

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CorpThe IXFH56N30X3 is a surface mount MOSFET with an N-channel Ultrjunction packaged in a TO-247AD package which is manufactured by IXYS Corporation. It has an on-state voltage of 2.8 to 2.9 volts. Its drain current ranges from 0.46 to 0.55 amperes. It has a drain source breakdown voltage of 300 volts, a Gate threshold voltage range of 5.2 to 6.2 volts, and a Gate Capacitance of 62 pF per element. It features an increased drive current capability, reduced gate charge, and an improved gate threshold voltage over the standard logic level FETs. The IXFH56N30X3 is designed for use in low to medium power switch application including AC/DC and DC/DC converters, as well as load and line switching.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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