IXFK200N10P IXYS

IXFK200N10P electronic component of IXYS
IXFK200N10P IXYS
IXFK200N10P MOSFETs
IXFK200N10P  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of IXFK200N10P MOSFETs across the USA, India, Europe, Australia, and various other global locations. IXFK200N10P MOSFETs are a product manufactured by IXYS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. IXFK200N10P
Manufacturer: IXYS
Category: MOSFETs
Description: MOSFET 200 Amps 100V 0.0075 Rds
Datasheet: IXFK200N10P Datasheet (PDF)
Price (USD)
1: USD 19.128 ea
Line Total: USD 19.13 
Availability : 951
  
Ship by Wed. 08 Oct to Fri. 10 Oct
QtyUnit Price
1$ 19.128
10$ 12.903
100$ 12.408

Availability 951
Ship by Wed. 08 Oct to Fri. 10 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 19.128
10$ 12.903
100$ 12.408

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Height
Length
Series
Transistor Type
Type
Width
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the IXFK200N10P from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXFK200N10P and other electronic components in the MOSFETs category and beyond.

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The IXFK200N10P is a high-power field-effect transistor (FET) from IXYS. It is a 200 ampere device in a N-channel MOSFET configuration, with a maximum drain-source voltage of 1000 volts (Vdss). It has a maximum gate-source voltage of +/-20 volts, and a maximum gate current of 10 amperes (Igss). It is capable of operating at temperatures up to 175 degrees Celsius. This device is suitable for use in applications such as motor control, smart power, and switching power supplies.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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IXYS Integrated Circuits Division
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IXYS SEMICONDUCTOR
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