V = 1000V High Voltage IXTA05N100HV DSS I = 750mA IXTA05N100 Power MOSFET D25 R 17 DS(on) IXTP05N100 N-Channel Enhancement Mode TO-263HV (IXTA) Avalanche Rated G S D (Tab) Symbol Test Conditions Maximum Ratings TO-263 AA (IXTA) V T = 25 C to 150 C 1000 V DSS J V T = 25 C to 150 C, R = 1M 1000 V DGR J GS V Continuous 30 V G GSS S V Transient 40 V GSM D (Tab) I T = 25 C 750 mA D25 C I T = 25 C, Pulse Width Limited by T 3A DM C JM TO-220AB (IXTP) I T = 25 C1A A C E T = 25 C 100 mJ AS C dv/dt I I , V V , T 150 C 3 V/ns S DM DD DSS J G D D (Tab) P T = 25 C40W D C S T -55 ... +150 C J T 150 C JM G = Gate D = Drain T -55 ... +150 C stg S = Source Tab = Drain T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD Features M Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in d High Voltage Package (TO-263HV) Weight TO-220 3.0 g Fast Switching Times TO-263 2.5 g TO-263HV 2.5 g Avalanche Rated TM R HDMOS Process ds(on) Rugged Polysilicon Gate Cell structure Extended FBSOA Advantages Symbol Test Conditions Characteristic Values High Power Density (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Space Savings BV V = 0V, I = 250A 1000 V DSS GS D Applications V V = V , I = 250A 2.5 4.5 V GS(th) DS GS D I V = 30V, V = 0V 100 nA Switch-Mode and Resonant-Mode GSS GS DS Power Supplies I V = V , V = 0V 25 A DSS DS DSS GS Flyback Inverters T = 125C 500A J DC Choppers R V = 10V, I = 375mA, Note 1 17 DS(on) GS D 2014 IXYS CORPORATION, All rights reserved DS98736F(5/14)IXTA05N100HV IXTA05N100 IXTP05N100 Symbol Test Conditions Characteristic Values TO-263AA Outline (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 500mA, Note 1 0.55 0.93 S fs DS D C 260 pF iss C V = 0V, V = 25V, f = 1MHz 22 pF oss GS DS C 8 pF rss t 11 ns d(on) Resistive Switching Times t 19 ns r = 10V, V = 0.5 V , I = 1A V GS DS DSS D t 40 ns d(off) PIN: 1 - Gate R = 47 (External) G t 28 ns 2,4 - Source f 3 - Drain Q 7.8 nC g(on) Q V = 10V, V = 0.5 V , I = 1A 1.4 nC gs GS DS DSS D Q 4.1 nC gd R 3.1 C/W thJC R (TO-220) 0.50 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 750 mA S GS I Repetitive, Pulse Width Limited by T 3 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS TO-220AB Outline t I = I , -di/dt = 100A/ s 710 ns rr F S V = 100V, V = 0V R GS Note 1: Pulse test, t 300 s, duty cycle, d 2%. TO-263HV Outline Pins: 1 - Gate 2 - Drain 3 - Source PIN: 1 - Gate 2 - Source 3 - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537