TM TrenchP IXTA28P065T V = - 65V DSS IXTP28P065T I = - 28A Power MOSFETs D25 R 45m DS(on) P-Channel Enhancement Mode Avalanche Rated TO-263 AA (IXTA) G Symbol Test Conditions Maximum Ratings S V T = 25C to 150C - 65 V D (Tab) DSS J V T = 25C to 150C, R = 1M - 65 V DGR J GS TO-220AB (IXTP) V Continuous 15 V GSS V Transient 25 V GSM I T = 25C - 28 A D25 C I T = 25C, Pulse Width Limited by T - 90 A G DM C JM D D (Tab) S I T = 25C - 28 A A C G = Gate D = Drain E T = 25C 200 mJ S C S = Source Tab = Drain P T = 25C83W D C T -55 ... +150 C J T 150 C JM T -55 ... +150 C Features stg T 1.6mm (0.062 in.) from Case for 10s 300 C L z International Standard Packages T Plastic Body for 10s 260 C SOLD z Avalanche Rated M Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in. z d Extended FBSOA z Weight TO-220 3.0 g Fast Intrinsic Diode TO-263 2.5 g z Low R and Q DS(ON) G Advantages z Easy to Mount z Space Savings z High Power Density Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J Applications BV V = 0V, I = - 250A - 65 V DSS GS D z High-Side Switching V V = V , I = - 250A - 2.5 - 4.5 V GS(th) DS GS D z Push Pull Amplifiers z I V = 15V, V = 0V 50 nA DC Choppers GSS GS DS z Automatic Test Equipment I V = V , V = 0V - 3 A DSS DS DSS GS z Current Regulators T = 125C -100 A J z Battery Charger Applications R V = -10V, I = 0.5 I , Note 1 45 m DS(on) GS D D25 2013 IXYS CORPORATION, All Rights Reserved DS99968B(01/13)IXTA28P065T IXTP28P065T Symbol Test Conditions Characteristic Values TO-263 Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = -10V, I = 0.5 I , Note 1 10 16 S fs DS D D25 C 2030 pF iss C V = 0V, V = - 25V, f = 1MHz 270 pF oss GS DS C 127 pF rss t 21 ns d(on) Resistive Switching Times t 29 ns r = -10V, V = 0.5 V , I = 0.5 I V GS DS DSS D D25 Pins: t 36 ns d(off) 1 - Gate R = 10 (External) G t 23 ns 2,4 - Drain f 3 - Source Q 46 nC g(on) Q V = -10V, V = 0.5 V , I = 0.5 I 20 nC gs GS DS DSS D D25 Q 10 nC gd R 1.5 C/W thJC R TO-220 0.50 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V - 28 A S GS I Repetitive, Pulse Width Limited by T -112 A SM JM TO-220 Outline V I = - 28A, V = 0V, Note 1 -1.5 V SD F GS t 31 ns rr I = -14A, -di/dt = -100A/s F Q 34 nC RM V = - 33V, V = 0V R GS I - 2.2 A RM Note 1. Pulse test, t 300s, duty cycle, d 2%. Pins: 1 - Gate 2 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537