Advance Technical Information TM Linear L2 V = 250V IXTA30N25L2 DSS Power MOSFET I = 30A IXTP30N25L2 D25 R 140m w/ Extended FBSOA DS(on) IXTH30N25L2 TO-263 (IXTA) N-Channel Enhancement Mode Avalanche Rated G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220 (IXTP) V T = 25 C to 150 C 250 V DSS J V T = 25 C to 150 C, R = 1M 250 V DGR J GS V Continuous 20 V GSS V Transient 30 V G GSM D S I T = 25 C30A D (Tab) D25 C I T = 25 C, Pulse Width Limited by T 65 A DM C JM TO-247 (IXTH) I T = 25 C 15 A A C E T = 25 C2J AS C P T = 25 C 355 W D C G T -55 ... +150 C J D D (Tab) S T 150 C JM T -55 ... +150 C stg G = Gate D = Drain T Maximum Lead Temperature for Soldering 300 C L S = Source Tab = Drain T Plastic Body for 10s 260 C SOLD F Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb C M Mounting Torque (TO-220 & TO-247) 1.13 / 10 Nm/lb.in d Features Weight TO-263 2.5 g TO-220 3.0 g Designed for Linear Operation TO-247 6.0 g International Standard Packages Avalanche Rated Molding Epoxies Meet UL 94 V-0 Flammability Classification Guaranteed FBSOA at 75C Advantages Symbol Test Conditions Characteristic Values Easy to Mount (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Space Savings BV V = 0V, I = 250 A 250 V DSS GS D High Power Density V V = V , I = 250A 2.5 4.5 V GS(th) DS GS D I V = 20V, V = 0V 100 nA Applications GSS GS DS I V = V , V = 0V 5 A DSS DS DSS GS Solid State Circuit Breakers T = 125C 50A J Soft Start Controls R V = 10V, I = 0.5 I , Note 1 140 m Linear Amplifiers DS(on) GS D D25 Programmable Loads Current Regulators 2018 IXYS CORPORATION, All Rights Reserved DS100919A(7/18) IXTA30N25L2 IXTP30N25L2 IXTH30N25L2 Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 0.5 I , Note 1 7 11 15 S fs DS D D25 C 3200 pF iss C V = 0V, V = 25V, f = 1MHz 430 pF oss GS DS C 130 pF rss t 22 ns d(on) Resistive Switching Times t 78 ns r V = 10V, 0.5 V , I = 0.5 I GS DSS D D25 t 65 ns d(off) R = 3 (External) G t 23 ns f Q 130 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 22 nC gs GS DS DSS D D25 Q 77 nC gd R 0.35 C/W thJC R (TO-220) 0.50 C/W thCS (TO-247) 0.21 C/W Safe Operating Area Specification Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J SOA V = 200V, I = 1.07A, T = 75C, tp = 2s 214 W DS D C Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V, Note1 30 A S GS I Repetitive, Pulse Width Limited by T 120 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 315 ns rr I = 15A, -di/dt = 100A/ s F Q 3.1 C RM V = 100V, V = 0V R GS I 19.5 A RM Note 1: Pulse test, t 300 s, duty cycle, d 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537