High Voltage V = 2500V IXTH1N250 DSS I = 1.5A Power MOSFET D25 R 40 DS(on) N-Channel Enhancement Mode Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings V T = 25C to 150C 2500 V DSS J V T = 25C to 150C, R = 1M 2500 V G DGR J GS D Tab S V Continuous 20 V GSS V Transient 30 V GSM G = Gate D = Drain S = Source Tab = Drain I T = 25C 1.5 A D25 C I T = 25C, Pulse Width Limited by T 6A DM C JM P T = 25C 250 W D C T - 55 ... +150 C J T 150 C JM T - 55 ... +150 C stg Features T 1.6mm (0.062 in.) From Case for 10s 300 C L z International Standard Package T Plastic Body for 10s 260 C SOLD z Molding Epoxies Weet UL 94 V-0 M Mounting Torque 1.13 / 10 Nm/lb.in. d Flammability Classification z Fast Intrinsic Diode Weight 6 g z Low Package Inductance Advantages Symbol Test Conditions Characteristic Values z Easy to Mount (T = 25C, Unless Otherwise Specified) Min. Typ. Max. z J Space Savings z High Power Density BV V = 0V, I = 250A 2500 V DSS GS D V V = V , I = 250A 2.0 4.0 V GS(th) DS GS D I V = 20V, V = 0V 100 nA GSS GS DS Applications I V = 0.8 V , V = 0V 25 A DSS DS DSS GS z High Voltage Power Supplies T = 125C 25 A J z Capacitor Discharge R V = 10V, I = 0.5 I , Note 1 40 z Pulse Circuits DS(on) GS D D25 2012 IXYS CORPORATION, All Rights Reserved DS99761C(04/12)IXTH1N250 Symbol Test Conditions Characteristic Values TO-247 (IXTH) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = 50V, I = 0.5A, Note 1 1.0 1.8 mS fs DS D C 1660 pF iss P C V = 0V, V = 25V, f = 1MHz 77 pF 1 2 3 oss GS DS C 23 pF rss t 69 ns d(on) Resistive Switching Times t 25 ns r V = 10V, V = 0.5 V , I = 1A GS DS DSS D t 132 ns d(off) R = 5 (External) e G t 39 ns f Terminals: 1 - Gate 2 - Drain 3 - Source Q 41 nC g(on) Dim. Millimeter Inches Q V = 10V, V = 600V, I = 0.5A 8 nC Min. Max. Min. Max. gs GS DS D A 4.7 5.3 .185 .209 Q 16 nC gd A 2.2 2.54 .087 .102 1 A 2.2 2.6 .059 .098 2 R 0.50 C/W thJC b 1.0 1.4 .040 .055 R 0.21 C/W b 1.65 2.13 .065 .084 thCS 1 b 2.87 3.12 .113 .123 2 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 Source-Drain Diode E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 Symbol Test Conditions Characteristic Values L1 4.50 .177 (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 I V = 0V 1.5 A S GS R 4.32 5.49 .170 .216 I Repetitive, Pulse Width Limited by T 6 A SM JM V I = 1A, V = 0V, Note 1 1.5 V SD F GS t I = 1A, -di/dt = 100A/ s, V = 200V 2.5 s rr F R Note 1. Pulse test, t 300 s, duty cycle, d 2%. *Additional provisions for lead to lead voltage isolation are required at V > 1200V. DS IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537