IXTK120N25P IXYS

Name: IXTK120N25P
Brand: IXYS
SKU: IXTK120N25P_IXYS
Availability: InStock
Rating: 5 (11 reviews)

IXTK120N25P electronic component of IXYS

Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of IXTK120N25P MOSFETs across the USA, India, Europe, Australia, and various other global locations. IXTK120N25P MOSFETs are a product manufactured by IXYS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.	IXTK120N25P
Manufacturer:	IXYS
Category:	MOSFETs
Description:	MOSFET 120 Amps 250V 0.024 Rds
Datasheet:	IXTK120N25P Datasheet (PDF)

Price (USD)

1: USD 17.304 ea
Line Total: USD 17.3

Availability : 13

Ship by Wed. 30 Jul to Fri. 01 Aug

Qty Unit Price
1 $ 17.304
10 $ 12.43
100 $ 11.429

IXTK120N25P More Buying Options & Price Grid(s)

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Availability

Price (USD)

Buy Price

Quantity

Availability 13

Ship by Wed. 30 Jul to Fri. 01 Aug

MOQ : 1
Multiples : 1

Qty Unit Price
1 $ 17.304
10 $ 12.43
100 $ 11.429

Availability 4

Ship by Wed. 30 Jul to Fri. 01 Aug

MOQ : 1
Multiples : 1

Qty Unit Price
1 $ 21.028
2 $ 17.234
4 $ 16.282
25 $ 16.156
50 $ 15.652

Specifications

Manufacturer

IXYS IXYS

Product Category

MOSFETs MOSFETs

RoHS - XON

Y Y

Id - Continuous Drain Current

120 A 120 A

Vds - Drain-Source Breakdown Voltage

250 V 250 V

Rds On - Drain-Source Resistance

24 mOhms 24 mOhms

Transistor Polarity

N - Channel N - Channel

Vgs th - Gate-Source Threshold Voltage

5 V 5 V

Minimum Operating Temperature

- 55 C - 55 C

Maximum Operating Temperature

+ 175 C + 175 C

Pd - Power Dissipation

700 W 700 W

Mounting Style

Through Hole Through Hole

Package / Case

TO - 264 - 3 TO - 264 - 3

Packaging

Tube Tube

Technology

Si Si

Number of Channels

1 Channel 1 Channel

Vgs - Gate-Source Voltage

20 V 20 V

Qg - Gate Charge

185 nC 185 nC

Channel Mode

Enhancement Enhancement

Tradename

Polarht Polarht

Configuration

Single Single

Height

26.16 mm 26.16 mm

Length

19.96 mm 19.96 mm

Series

Ixtk120n25 Ixtk120n25

Transistor Type

1 N - Channel 1 N - Channel

Type

Polarht Power Mosfet Polarht Power Mosfet

Width

5.13 mm 5.13 mm

Brand

Ixys Ixys

Forward Transconductance - Min

50 S 50 S

Cnhts

8541290000 8541290000

Fall Time

33 ns 33 ns

Hts Code

8541290095 8541290095

Mxhts

85415001 85415001

Product Type

Mosfet Mosfet

Rise Time

33 ns 33 ns

Factory Pack Quantity :

25 25

Subcategory

Mosfets Mosfets

Taric

8541500000 8541500000

Typical Turn-Off Delay Time

130 ns 130 ns

Typical Turn-On Delay Time

30 ns 30 ns

Notes:- Show Stocked Products With Similar Attributes.

IXTK120N25P Alternative Parts

We are delighted to provide the IXTK120N25P from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXTK120N25P and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The IXTK120N25P is an insulated-gate bipolar transistor (IGBT) from IXYS Corporation. It is designed to provide high-current switching capability in harsh environments. This device is designed to operate at a maximum of 1200 volts and 25 amps in normal conditions and up to 3000 volts and 120 amps in avalanche conditions. It has an on-state voltage drop of < 1.4 volts and a gate threshold voltage of < 4 volts. The IXTK120N25P is RoHS-compliant and is certified to comply with a wide range of industry standards and regulations including UL, VDE, and IEC. It is ideal for high-power and high-energy applications such as inverters, servo motors, welding, and power conversion.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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Qty	Unit Price
1	$ 21.028
2	$ 17.234
4	$ 16.282
25	$ 16.156
50	$ 15.652

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