Preliminary Technical Information TM IXTK140N30P V = 300V Polar Power MOSFET DSS I = 140A D25 N-Channel Enhancement Mode R 24m DS(on) Avalanche Rated Fast Intrinsic Diode TO-264 (IXTK) Symbol Test Conditions Maximum Ratings V T = 25C to 150C 300 V DSS J V T = 25C to 150C, R = 1M 300 V DGR J GS V Continuous 20 V GSS G V Transient 30 V GSM D (TAB) S I T = 25C 140 A D25 C I Terminal Current Limit 75 A LRMS I T = 25C, pulse width limited by T 300 A DM C JM G = Gate D = Drain I T = 25C80A AR C S = Source TAB = Drain E T = 25C80mJ AR C E T = 25C5J AS C dV/dt I I , V V , T 150C 15 V/ns S DM DD DSS J Features P T = 25C 1040 W D C T -55 ... +150 C z J Fast intrinsic diode T 150 C z JM International standard packages z T -55 ... +150 C Unclamped Inductive Switching (UIS) stg rated T 1.6mm (0.062 in.) from case for 10s 300 C L z Low package inductance T Plastic body for 10s 260 C SOLD - easy to drive and to protect M Mounting torque 1.13/10 Nm/lb.in. d Weight TO-264 10 g Advantages z Easy to mount z Space savings z High power density Symbol Test Conditions Characteristic Values (T = 25C, unless otherwise specified) Min. Typ. Max. J Applications BV V = 0V, I = 3mA 300 V DSS GS D z Switched-mode and resonant-mode V V = V , I = 500A 3.0 5.0 V GS(th) DS GS D power supplies z DC-DC Converters I V = 20V, V = 0V 200 nA GSS GS DS z Laser Drivers I V = V 1 A z DSS DS DSS AC and DC motor controls V = 0 V T = 125C 250 A z GS J Robotics and servo controls R V = 10V, I = 0.5 I , Note 1 20 24 m DS(on) GS D D25 2008 IXYS CORPORATION,All rights reserved DS99980(5/08)IXTK140N30P Symbol Test Conditions Characteristic Values TO-264 (IXTK) Outline (T = 25C unless otherwise specified) Min. Typ. Max. J g V = 20V, I = 0.5 I , Note 1 50 90 S fs DS D D25 C 14.8 nF iss C V = 0V, V = 25V, f = 1MHz 1830 pF oss GS DS C 55 pF rss t Resistive Switching Times 30 ns d(on) t V = 10V, V = 0.5 V , I = 0.5 I 30 ns r GS DS DSS D D25 t R = 1 (External) 100 ns d(off) G t 20 ns f Millimeter Inches Dim. Min. Max. Min. Max. Q 185 nC g(on) A 4.82 5.13 .190 .202 A1 2.54 2.89 .100 .114 Q V = 10V, V = 0.5 V , I = 0.5 I 72 nC gs GS DS DSS D D25 A2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 Q 60 nC gd b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 R 0.12 C/W c 0.53 0.83 .021 .033 thJC D 25.91 26.16 1.020 1.030 R 0.15 C/W thCK E 19.81 19.96 .780 .786 e 5.46 BSC .215 BSC J 0.00 0.25 .000 .010 K 0.00 0.25 .000 .010 Source-Drain Diode Characteristic Values L 20.32 20.83 .800 .820 L1 2.29 2.59 .090 .102 T = 25C unless otherwise specified) J P 3.17 3.66 .125 .144 Symbol Test Conditions Min. Typ. Max. Q 6.07 6.27 .239 .247 Q1 8.38 8.69 .330 .342 I V = 0V 140 A R 3.81 4.32 .150 .170 S GS R1 1.78 2.29 .070 .090 S 6.04 6.30 .238 .248 I Repetitive, pulse width limited by T 300 A SM JM T 1.57 1.83 .062 .072 V I = 90A, V = 0V 1.3 V SD F GS I = 25A, -di/dt = 100A/s, V = 100V, V = 0V t 250 ns F R GS rr Note 1: Pulse test, t 300s duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537