TM PolarP V = - 500V IXTT20P50P DSS I = - 20A Power MOSFET IXTH20P50P D25 R 450m DS(on) P-Channel Enhancement Mode Avalanche Rated TO-268 (IXTT) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-247 (IXTH) V T = 25 C to 150 C - 500 V DSS J V T = 25 C to 150 C, R = 1M - 500 V DGR J GS V Continuous 20 V GSS V Transient 30 V GSM G I T = 25 C - 20 A D D25 C D (Tab) S I T = 25 C, Pulse Width Limited by T - 60 A DM C JM I T = 25 C - 20 A A C G = Gate D = Drain S = Source Tab = Drain E T = 25 C 2.5 J AS C dv/dt I I , V V , T 150 C 10 V/ns S DM DD DSS J P T = 25 C 460 W D C T - 55 ... +150 C Features J T 150 C JM T - 55 ... +150 C International Standard Packages stg Avalanche Rated T Maximum Lead Temperature for Soldering 300 C L TM Rugged PolarP Process T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD Low Package Inductance M Mounting Torque (TO-247) 1.13 / 10 Nm/lb.in. d Fast Intrinsic Diode Weight TO-268 4 g TO-247 6 g Advantages Easy to Mount Space Savings High Power Density Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Applications BV V = 0V, I = - 250 A - 500 V DSS GS D V V = V , I = - 250A - 2.0 - 4.5 V GS(th) DS GS D High-Side Switches Push Pull Amplifiers I V = 20V, V = 0V 100 nA GSS GS DS DC Choppers I V = V , V = 0V - 25 A DSS DS DSS GS Automatic Test Equipment T = 125C - 200A J Current Regulators R V = -10V, I = 0.5 I , Note 1 450 m DS(on) GS D D25 2016 IXYS CORPORATION, All Rights Reserved DS99984C(11/16) IXTT20P50P IXTH20P50P Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J g V = -10V, I = 0.5 I , Note 1 11 18 S fs DS D D25 C 5120 pF iss C V = 0V, V = - 25V, f = 1MHz 525 pF oss GS DS C 75 pF rss t 26 ns d(on) Resistive Switching Times t 32 ns r V = -10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 80 ns d(off) R = 3 (External) G t 34 ns f Q 103 nC g(on) Q V = -10V, V = 0.5 V , I = 0.5 I 28 nC gs GS DS DSS D D25 Q 38 nC gd R 0.27 C/W thJC R 0.21 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V - 20 A S GS I Repetitive, Pulse Width Limited by T - 80 A SM JM V I = -10A, V = 0V, Note 1 - 2.8 V SD F GS t 406 ns I = -10A, -di/dt = -150A/ s rr F Q 8.93 C RM V = -100V, V = 0V R GS I - 44 A RM Note 1: Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537