X4-Class V = 200V IXTT220N20X4HV DSS TM Power MOSFET I = 220A D25 R 5.5m D DS(on) N-Channel Enhancement Mode G Avalanche Rated S TO-268HV (IXTT..HV) G Symbol Test Conditions Maximum Ratings S V T = 25 C to 175 C 200 V DSS J D (Tab) V T = 25 C to 175 C, R = 1M 200 V DGR J GS V Continuous 20 V GSS G = Gate D = Drain V Transient 30 V S = Source Tab = Drain GSM I T = 25 C 220 A D25 C I External Lead Current Limit 160 A L(RMS) I T = 25 C, Pulse Width Limited by T 400 A DM C JM I T = 25 C 110 A A C E T = 25 C 900 mJ AS C Features dv/dt I I , V V , T 150C 50 V/ns S DM DD DSS J International Standard Package P T = 25 C 800 W D C Low R and Q DS(ON) G T -55 ... +175 C J Avalanche Rated Low Package Inductance T 175 C JM T -55 ... +175 C stg T Plastic Body for 10s 260 C Advantages SOLD Weight 4 g High Power Density Easy to Mount Space Savings Applications Symbol Test Conditions Characteristic Values Switch-Mode and Resonant-Mode (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Power Supplies DC-DC Converters BV V = 0V, I = 250A 200 V DSS GS D PFC Circuits V V = V , I = 250A 2.5 4.5 V AC and DC Motor Drives GS(th) DS GS D Robotics and Servo Controls I V = 20V, V = 0V 100 nA GSS GS DS I V = V , V = 0V 10 A DSS DS DSS GS T = 150 C 1.5 mA J R V = 10V, I = 0.5 I , Note 1 4.1 5.5 m DS(on) GS D D25 DS101008B(12/20) 2020 Littelfuse, Inc. IXTT220N20X4HV Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max J g V = 10V, I = 60A, Note 1 90 150 S fs DS D R Gate Input Resistance 1.6 Gi C 12.3 nF iss C V = 0V, V = 25V, f = 1MHz 1650 pF oss GS DS C 5.4 pF rss Effective Output Capacitance C 900 pF o(er) Energy related V = 0V GS C 3400 pF V = 0.8 V o(tr) Time related DS DSS t 30 ns d(on) Resistive Switching Times t 15 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 87 ns d(off) R = 2 (External) G t 6 ns f Q 157 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 50 nC gs GS DS DSS D D25 Q 46 nC gd R 0.19 C/W thJC Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V 220 A S GS I Repetitive, pulse Width Limited by T 880 A SM JM V I = 100A, V = 0V, Note 1 1.4 V SD F GS t 140 ns rr I = 110A, -di/dt = 100A/s F Q 770 nC RM V = 100V R I 11 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. Littelfuse reserves the right to change limits, test conditions and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537