IXTT68P20T IXYS

IXTT68P20T electronic component of IXYS
IXTT68P20T IXYS
IXTT68P20T MOSFETs
IXTT68P20T  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of IXTT68P20T MOSFETs across the USA, India, Europe, Australia, and various other global locations. IXTT68P20T MOSFETs are a product manufactured by IXYS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. IXTT68P20T
Manufacturer: IXYS
Category: MOSFETs
Description: MOSFET TrenchP Power MOSFET
Datasheet: IXTT68P20T Datasheet (PDF)
Price (USD)
1: USD 20.112 ea
Line Total: USD 20.11 
Availability : 32
  
Ship by Wed. 30 Jul to Fri. 01 Aug
QtyUnit Price
1$ 20.112
10$ 13.42
120$ 12.892
1020$ 12.848
5010$ 12.837

Availability 32
Ship by Wed. 30 Jul to Fri. 01 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 20.112
10$ 13.42
120$ 12.892
1020$ 12.848
5010$ 12.837


Availability 13
Ship by Wed. 30 Jul to Fri. 01 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 21.378
3$ 20.216
10$ 20.174
30$ 19.432

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Mounting Style
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Packaging
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Configuration
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We are delighted to provide the IXTT68P20T from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXTT68P20T and other electronic components in the MOSFETs category and beyond.

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Preliminary Technical Information TM TrenchP V = - 200V IXTT68P20T DSS Power MOSFETs I = - 68A IXTH68P20T D25 R 55m DS(on) P-Channel Enhancement Mode TO-268 (IXTT) Avalanche Rated G S D (Tab) Symbol Test Conditions Maximum Ratings TO-247 (IXTH) V T = 25C to 150C - 200 V DSS J V T = 25C to 150C, R = 1M - 200 V DGR J GS V Continuous 15 V GSS V Transient 25 V GSM G I T = 25C - 68 A D D25 C D (Tab) S I T = 25C, Pulse Width Limited by T - 200 A DM C JM I T = 25C - 68 A A C G = Gate D = Drain S = Source Tab = Drain E T = 25C 2.5 J AS C dv/dt I I , V V , T 150C 10 V/ns S DM DD DSS J P T = 25C 568 W Features D C T - 55 ... +150 C J z International Standard Packages T 150 C JM z Avalanche Rated T - 55 ... +150 C stg z Extended FBSOA z T 1.6mm (0.062 in.) from Case for 10s 300 C Fast Intrinsic Diode L T Plastic Body for 10s 260 C z SOLD Low R and Q DS(ON) G M Mounting Torque (TO-247) 1.13 / 10 Nm/lb.in. d Weight TO-268 4 g Advantages TO-247 6 g z Easy to Mount z Space Savings z High Power Density Applications Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J z BV V = 0V, I = - 250A - 200 V High-Side Switching DSS GS D z Push Pull Amplifiers V V = V , I = - 250A - 2.0 - 4.0 V GS(th) DS GS D z DC Choppers z Automatic Test Equipment I V = 15V, V = 0V 100 nA GSS GS DS z Current Regulators I V = V , V = 0V - 10 A z DSS DS DSS GS Battery Charger Applications T = 125C - 200 A J R V = -10V, I = 0.5 I , Note 1 55 m DS(on) GS D D25 2013 IXYS CORPORATION, All Rights Reserved DS100370A(01/13)IXTT68P20T IXTH68P20T Symbol Test Conditions Characteristic Values TO-268 Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = -10V, I = 0.5 I , Note 1 55 90 S fs DS D D25 C 33.4 nF iss C V = 0V, V = - 25V, f = 1MHz 1300 pF oss GS DS C 307 pF rss t 63 ns d(on) Resistive Switching Times t 29 ns r V = -10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 115 ns d(off) Terminals: 1 - Gate 2,4 - Drain R = 1 (External) G 3 - Source t 18 ns f Q 380 nC g(on) Q V = -10V, V = 0.5 V , I = 0.5 I 125 nC gs GS DS DSS D D25 Q 70 nC gd R 0.22 C/W thJC R TO-247 0.21 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V - 68 A TO-247 Outline S GS I Repetitive, Pulse Width Limited by T - 270 A SM JM V I = I , V = 0V, Note 1 -1.4 V SD F S GS P t 245 ns 1 2 3 rr I = - 34A, -di/dt = -100A/s F Q 2.6 C RM V = -100V, V = 0V R GS I - 21.4 A RM e Terminals: 1 - Gate 2 - Drain Note 1. Pulse test, t 300s, duty cycle, d 2%. 3 - Source Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A 2.2 2.54 .087 .102 1 A 2.2 2.6 .059 .098 2 PRELIMINARY TECHNICAL INFORMATION b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 1 The product presented herein is under development. The Technical Specifications offered are derived b 2.87 3.12 .113 .123 2 from data gathered during objective characterizations of preliminary engineering lots but also may yet C .4 .8 .016 .031 contain some information supplied during a pre-production design evaluation. IXYS reserves the right D 20.80 21.46 .819 .845 to change limits, test conditions, and dimensions without notice. E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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