Advance Technical Information TM LinearL2 Power V = 100V IXTH75N10L2 DSS MOSFET w/extended I = 75A IXTT75N10L2 D25 R 21m FBSOA DS(on) D DDD OO D N-Channel Enhancement Mode R Gi Guaranteed FBSOA ww G O Avalanche Rated TO-247 (IXTH) O S Symbol Test Conditions Maximum Ratings G V T = 25C to 150C 100 V D D (Tab) DSS J S V T = 25C to 150C, R = 1M 100 V DGR J GS V Continuous 20 V GSS V Transient 30 V GSM TO-268 (IXTT) I T = 25C 75 A D25 C I T = 25C, Pulse Width Limited by T 225 A DM C JM G I T = 25C 75 A A C S E 2.5 J AS D (Tab) P T = 25C 400 W D C T -55 to +150 C J G = Gate D = Drain T +150 C JM S = Source Tab = Drain T -55 to +150 C stg T 1.6mm (0.063in) from Case for 10s 300 C L T Plastic Body for 10s 260 C SOLD Features M Mounting Torque (TO-247) 1.13/10 Nm/lb.in. d Weight TO-247 6.0 g z Designed for Linear Operation TO-268 4.0 g z International Standard Packages z Avalanche Rated z Integrated Gate Resistor for Easy Paralleling z Guaranteed FBSOA at 75C Symbol Test Conditions Characteristic Values Advantages (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = 250A 100 V z DSS GS D Easy to Mount z V V = V , I = 250A 2.5 4.5 V Space Savings GS(th) DS GS D z High Power Density I V = 20V, V = 0V 100 nA GSS GS DS I V = V , V = 0V 5 A DSS DS DSS GS Applications T = 125C 50 A J z Solid State Circuit Breakers R V = 10V, I = 0.5 I , Note 1 21 m DS(on) GS D D25 z Soft Start Controls z Linear Amplifiers z Programmable Loads z Current Regulators 2009 IXYS CORPORATION, All Rights Reserved DS100200(9/09)IXTH75N10L2 IXTT75N10L2 Symbol Test Conditions Characteristic Values TO-247 (IXTH) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 0.5 I , Note 1 35 44 53 S fs DS D D25 C 8100 pF iss C V = 0V, V = 25V, f = 1MHz 1280 pF P oss GS DS 1 2 3 C 350 pF rss R Integrated Gate Input Resistor 3.0 Gi t 23 ns d(on) Resistive Switching Times t 14 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 e t 68 ns d(off) R = 0 (External) G Terminals: 1 - Gate 2 - Drain t 15 ns f 3 - Source Tab - Drain Q 215 nC g(on) Dim. Millimeter Inches Q V = 10V, V = 0.5 V , I = 0.5 I 36 nC Min. Max. Min. Max. gs GS DS DSS D D25 A 4.7 5.3 .185 .209 Q 80 nC gd A 2.2 2.54 .087 .102 1 A 2.2 2.6 .059 .098 R 0.31 C/W 2 thJC b 1.0 1.4 .040 .055 R TO-247 0.21 C/W b 1.65 2.13 .065 .084 thCS 1 b 2.87 3.12 .113 .123 2 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 Safe Operating Area Specification E 15.75 16.26 .610 .640 Characteristic Values e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 Symbol Test Conditions Min. Typ. Max. L1 4.50 .177 SOA V = 80V, I = 3A, T = 75C, Tp = 5s 240 W P 3.55 3.65 .140 .144 DS D C Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC TO-268 (IXTT) Outline Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 75 A S GS I Repetitive, Pulse Width Limited by T 300 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 180 ns rr I = 37.5A, -di/dt = 100A/s, F I 16.2 A RM V = 50V, V = 0V R GS Q 1.46 C RM Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain Note 1. Pulse test, t 300s duty cycle, d 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537