Preliminary Technical Information TM TrenchP V = - 100V IXTK210P10T DSS Power MOSFETs I = - 210A IXTX210P10T D25 R 7.5m DS(on) t 200ns rr P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-264 (IXTK) Symbol Test Conditions Maximum Ratings G V T = 25C to 150C -100 V D DSS J S V T = 25C to 150C, R = 1M -100 V DGR J GS Tab V Continuous 15 V GSS V Transient 25 V GSM PLUS247 (IXTX) I T = 25C (Chip Capability) - 210 A D25 C I Lead Current Limit, RMS -160 A LRMS I T = 25C, Pulse Width Limited by T - 800 A DM C JM I T = 25C -100 A G A C D E T = 25C3J Tab AS C S dv/dt I I , V V , T 150C 10 V/ns S DM DD DSS J G = Gate D = Drain P T = 25C 1040 W S = Source Tab = Drain D C T -55 ... +150 C J T 150 C JM Features T -55 ... +150 C stg z International Standard Packages T 1.6mm (0.062 in.) from Case for 10s 300 C L z High Current Handling Capability T Plastic Body for 10s 260 C SOLD z Avalanche Rated M Mounting Torque (TO-264) 1.13/10 Nm/lb.in. z d Extended FBSOA z F Mounting Force (PLUS247) 20..120 /4.5..27 N/lb. Fast Intrinsic Recitifier C z Low R and Q DS(ON) G Weight TO-264 10 g PLUS247 6 g Advantages z Easy to Mount z Space Savings Symbol Test Conditions Characteristic Values z High Power Density (T = 25C Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = - 250A -100 V DSS GS D Applications V V = V , I = - 250A - 2.5 - 4.5 V GS(th) DS GS D z High-Side Switching I V = 15V, V = 0V 200 nA GSS GS DS z Push Pull Amplifiers z DC Choppers I V = V , V = 0V - 25 A DSS DS DSS GS z Automatic Test Equipment T = 125C - 300 A J z Current Regulators R V = -10V, I = 0.5 I , Note 1 7.5 m z DS(on) GS D D25 Battery Charger Applications 2013 IXYS CORPORATION, All Rights Reserved DS100397A(01/13) IXTK210P10T IXTX210P10T Symbol Test Conditions Characteristic Values TO-264 AA Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g V = -10V, I = - 60A, Note 1 90 150 S fs DS D C 69.5 nF iss C V = 0V, V = - 25V, f = 1MHz 4070 pF oss GS DS C 1100 pF rss t 90 ns d(on) Resistive Switching Times Terminals: 1 - Gate t 98 ns r 2 - Drain V = -10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 3 - Source t 165 ns d(off) 4 - Drain R = 1 (External) G Dim. Millimeter Inches t 55 ns f Min. Max. Min. Max. A 4.82 5.13 .190 .202 Q 740 nC g(on) A1 2.54 2.89 .100 .114 A2 2.00 2.10 .079 .083 Q V = -10V, V = 0.5 V , I = 0.5 I 200 nC gs GS DS DSS D D25 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 Q 155 nC gd b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 R 0.12 C/W thJC D 25.91 26.16 1.020 1.030 E 19.81 19.96 .780 .786 R 0.15 C/W thCS e 5.46 BSC .215 BSC J 0.00 0.25 .000 .010 K 0.00 0.25 .000 .010 L 20.32 20.83 .800 .820 L1 2.29 2.59 .090 .102 P 3.17 3.66 .125 .144 Source-Drain Diode Q 6.07 6.27 .239 .247 Q1 8.38 8.69 .330 .342 R 3.81 4.32 .150 .170 Symbol Test Conditions Characteristic Values R1 1.78 2.29 .070 .090 (T = 25C Unless Otherwise Specified) Min. Typ. Max. S 6.04 6.30 .238 .248 J T 1.57 1.83 .062 .072 I V = 0V - 210 A S GS TM I Repetitive, Pulse Width Limited by T - 840 A PLUS247 Outline SM JM V I = -100A, V = 0V, Note 1 -1.4 V SD F GS t 200 ns rr I = -105A, -di/dt = -100A/s F Q 930 nC RM V = -100V, V = 0V I R GS 12.4 A RM Note 1. Pulse test, t 300s, duty cycle, d 2%. Terminals: 1 - Gate 2 - Drain 3 - Source Dim. Millimeter Inches Min. Max. Min. Max. A 4.83 5.21 .190 .205 PRELIMINARY TECHNICAL INFORMATION A 2.29 2.54 .090 .100 1 A 1.91 2.16 .075 .085 The product presented herein is under development. The Technical Specifications offered are derived 2 b 1.14 1.40 .045 .055 from data gathered during objective characterizations of preliminary engineering lots but also may yet b 1.91 2.13 .075 .084 1 contain some information supplied during a pre-production design evaluation. IXYS reserves the right b 2.92 3.12 .115 .123 2 to change limits, test conditions, and dimensions without notice. C 0.61 0.80 .024 .031 D 20.80 21.34 .819 .840 E 15.75 16.13 .620 .635 e 5.45 BSC .215 BSC L 19.81 20.32 .780 .800 L1 3.81 4.32 .150 .170 Q 5.59 6.20 .220 0.244 R 4.32 4.83 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537