MDNA50P2200TG V = 2x2200 V RRM High Voltage Standard Rectifier Module I = 50 A FAV V = 1.09 V F Phase leg Part number MDNA50P2200TG Backside: isolated 2 1 3 Features / Advantages: Applications: Package: TO-240AA Package with DCB ceramic Diode for main rectification Isolation Voltage: V~ 4800 Improved temperature and power cycling For single and three phase Industry standard outline Planar passivated chips bridge configurations RoHS compliant Very low forward voltage drop Supplies for DC power equipment Height: 30 mm Very low leakage current Input rectifiers for PWM inverter Base plate: DCB ceramic Battery DC power supplies Reduced weight Field supply for DC motors Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191202b 2019 IXYS all rights reservedMDNA50P2200TG Ratings Rectifier Symbol Definition Conditions min. typ. max. Unit T = 25C 2300 V V max. non-repetitive reverse blocking voltage RSM VJ T = 25C 2200 V V max. repetitive reverse blocking voltage RRM VJ reverse current I V = 2 2 0 0 V T = 25C 50 A R VJ R V = 2 2 0 0 V T = 1 5 0 C 1.5 mA R VJ forward voltage drop V I = 5 0 A T = 25C 1.13 V F F VJ I = 1 0 0 A 1.34 V F T = C 1.09 V I = 5 0 A 125 F VJ I = 1 0 0 A 1.37 V F average forward current T = 1 0 0 C T = 1 5 0 C 50 A I FAV C VJ rectangular d = 0.5 V T = 1 5 0 C 0.80 V threshold voltage F0 VJ for power loss calculation only slope resistance r 5.7 m F thermal resistance junction to case 0.65 K/W R thJC thermal resistance case to heatsink K/W R 0.2 thCH P total power dissipation T = 25C 190 W tot C max. forward surge current t = 10 ms (50 Hz), sine T = 45C 850 A I FSM VJ t = 8,3 ms (60 Hz), sine V = 0 V 920 A R t = 10 ms (50 Hz), sine T = 1 5 0 C A 725 VJ t = 8,3 ms (60 Hz), sine V = 0 V 780 A R value for fusing It t = 10 ms (50 Hz), sine T = 45C 3.62 kAs VJ t = 8,3 ms (60 Hz), sine V = 0 V 3.52 kAs R t = 10 ms (50 Hz), sine T = 1 5 0 C 2.63 kAs VJ t = 8,3 ms (60 Hz), sine V = 0 V 2.53 kAs R V = 4 0 0 V f = 1 MHz T = 25C 27 pF C junction capacitance J R VJ IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191202b 2019 IXYS all rights reserved