VUB72-12NOXT 3~ Brake Standard Rectifier Module Rectifier Chopper V = 1200 V V = 1200 V RRM CES I 75 A I 58 A = = DAV C25 A V I = 600 V = 1.85 FSM CE(sat) 3~ Rectifier Bridge + Brake Unit + NTC Part number VUB72-12NOXT Backside: isolated 6 11 12 10 NTC 1~ 5 7~ 9~ 2 4 Features / Advantages: Applications: Package: V1-A-Pack Package with DCB ceramic base plate 3~ Rectifier with brake unit Isolation Voltage: V~ 3600 Improved temperature and power cycling for drive inverters Industry standard outline Planar passivated chips RoHS compliant Very low forward voltage drop Soldering pins for PCB mounting Very low leakage current Height: 17 mm NTC Base plate: DCB ceramic Reduced weight Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191220e 2019 IXYS all rights reservedVUB72-12NOXT Ratings Rectifier Symbol Definition Conditions min. typ. max. Unit T = 25C 1300 V V max. non-repetitive reverse blocking voltage RSM VJ T = 25C 1200 V V max. repetitive reverse blocking voltage RRM VJ reverse current I V = 1 2 0 0 V T = 25C 40 A R VJ R V = 1 2 0 0 V T = 1 5 0 C 1.5 mA R VJ forward voltage drop V I = 2 5 A T = 25C 1.10 V F F VJ I = 7 5 A 1.38 V F T = C 1.01 V I = 2 5 A 125 F VJ I = 7 5 A 1.37 V F bridge output current T = 1 1 0 C T = 1 5 0 C 75 A I DAV C VJ rectangular d = V T = 1 5 0 C 0.79 V threshold voltage F0 VJ for power loss calculation only slope resistance r 7.7 m F thermal resistance junction to case 1.1 K/W R thJC thermal resistance case to heatsink 0.3 K/W R thCH P total power dissipation T = 25C 110 W tot C max. forward surge current t = 10 ms (50 Hz), sine T = 45C 600 A I FSM VJ t = 8,3 ms (60 Hz), sine V = 0 V 650 A R t = 10 ms (50 Hz), sine T = 1 5 0 C A 510 VJ t = 8,3 ms (60 Hz), sine V = 0 V 550 A R value for fusing It t = 10 ms (50 Hz), sine T = 45C 1.80 kAs VJ t = 8,3 ms (60 Hz), sine V = 0 V 1.76 kAs R t = 10 ms (50 Hz), sine T = 1 5 0 C 1.30 kAs VJ t = 8,3 ms (60 Hz), sine V = 0 V 1.26 kAs R V = 4 0 0 V f = 1 MHz T = 25C 19 pF C junction capacitance J R VJ IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191220e 2019 IXYS all rights reserved