Product Information

JST24A-800BW

Product Image X-ON

Datasheet
Thyristors - TRIACs Two-way thyristor 800V TO-220 (TO-220-3) RoHS

Manufacturer: JieJie
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.1706 ea
Line Total: USD 1.1706

1531 - Global Stock
Ships to you between
Fri. 23 Jun to Wed. 28 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1441 - Global Stock


Ships to you between
Fri. 23 Jun to Wed. 28 Jun

MOQ : 1
Multiples : 1
1 : USD 1.1814
10 : USD 0.9794
50 : USD 0.8806
100 : USD 0.7796
500 : USD 0.625
1000 : USD 0.5949

     
Manufacturer
JieJie
Product Category
Triacs
Category
Triacs
Rohs
y
Package
TO - 220 (TO - 220 - 3)
Brand Category
Jiejie
Type
two - way thyristor
Voltage - Off State Max
800 V
Current - On State It Rms Max
25 A
Voltage - Gate Trigger Vgt Max
1.3 V
Current - Gate Trigger Igt Max
50 mA
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JIEJIE MICROELECTRONICS CO. , Ltd JST24 Series 25A TRIACs Rev.3.0 DESCRIPTION: JST24 series triacs, with high ability to withstand the shock loading of large current, provide high dv/dt rate with strong resistance to electromagnetic TO-220A TO-220B 1 1 interface. With high commutation performances, 2 2 3 3 Insulated Non-Insulated 3 quadrants products especially recommended for use on inductive load. 2 JST24A provides insulation voltage rated at 2500V RMS and JST24F provides insulation voltage rated 1 1 TO-220F 3 2 3 TO-263 at 2000V RMS from all three terminals to external Insulated heatsink complying with UL standards (File ref: T1(1) E252906). G(3) MAIN FEATURES Symbol Value Unit I 25 A T2(2) T(RMS) V /V 600 and 800 and 1200 V DRM RRM ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Unit Storage junction temperature range T -40-150 stg Operating junction temperature range T -40-125 j Repetitive peak off-state voltage (T =25 ) V 600/800/1200 V j DRM Repetitive peak reverse voltage (T =25 ) V 600/800/1200 V j RRM Non repetitive surge peak Off-state voltage V V +100 V DSM DRM Non repetitive peak reverse voltage V V +100 V RSM RRM TO-220A(Ins)/ TO-220F(Ins) (T =75) C RMS on-state TO-220B(Non-Ins) I 25 A T(RMS) current (T =90 ) C TO-263 (T =100 ) C TEL +86-513-83639777 - 1 / 6- JST24 Series JieJie Microelectronics CO. , Ltd Non repetitive surge peak on-state current I 250 A TSM (full cycle, F=50Hz) 2 2 2 I t value for fusing (tp=10ms) I t 340 A s Critical rate of rise of on-state current dI/dt 50 A /s (I =2 I ) G GT Peak gate current I 4 A GM Average gate power dissipation P 1 W G(AV) Peak gate power P 10 W GM ELECTRICAL CHARACTERISTICS (T =25 unless otherwise specified) j V /V : 600/800V DRM RRM JST24-600/800V Symbol Test Condition Quadrant Unit BW CW I -- MAX 50 35 mA GT V =12V R =33 D L V -- MAX 1.3 V GT V =V T =125 D DRM j V -- MIN 0.2 V GD R =3.3K L - 80 70 I MAX mA L I =1.2I G GT 100 80 I I =100mA MAX 75 50 mA H T dV/dt V =2/3V Gate Open T =125 MIN 1000 500 V /s D DRM j (dV/dt)c Without snubber T =125 MIN 22 13 V /s j V /V : 1200V DRM RRM JST24-1200V Symbol Test Condition Quadrant Unit BW CW I -- MAX 50 35 mA GT V =12V R =33 D L V -- MAX 1.5 V GT V =V T =125 D DRM j V -- MIN 0.2 V GD R =3.3K L - 90 70 I MAX mA I =1.2I L G GT 100 80 I I =100mA MAX 80 60 mA H T TEL +86-513-83639777 - 2 / 6-

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
Jiangsu JieJie Microelectronics