APT1608SEC

1.6X0.8mm SMD CHIP LED LAMP P/N: APT1608SEC SUPER BRIGHT ORANGE Description Features The Super Bright Orange device is made with DH 1.6mmX0.8mm SMT LED, 0.75mm THICKNESS. LOW POWER CONSUMPTION. InGaAlP (on GaAs substrate) light emitting diode chip. WIDE VIEWING ANGLE. IDEAL FOR BACKLIGHT AND INDICATOR. VARIOUS COLORS AND LENS TYPES AVAILABLE. MOISTURE SENSITIVITY LEVEL : LEVEL 3. PACKAGE: 2000PCS / REEL . RoHS COMPLIANT. Package Dimensions Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is 0.1(0.004 ) unless otherwise noted. 3.Specifications are subject to change without notice. SPEC NO: DSAD0927 REV NO: V.5 DATE: MAR/25/2006 PAGE: 1 OF 5 APPROVED: J. Lu CHECKED: Allen Liu DRAWN: H.Q.YUAN ERP:1203005345Selection Guide Iv (mcd) 2 V i e w i n g 20mA Angle 1 Part No. Dice Lens Type Min. Typ. 21/2 APT1608SEC SUPER BRIGHT ORANGE (InGaAlP) WATER CLEAR 70 200 120 Notes: 1. 1/2 is the angle from optical centerline where the luminous intensity is 1/2 the optical centerline value. 2. Luminous intensity/ luminous Flux: +/-15%. Electrical / Optical Characteristics at TA=25C Symbol Parameter Device Typ. Max. Units Test Conditions peak Peak Wavelength Super Bright Orange 610 nm IF=20mA Dominant Wavelength Super Bright Orange 601 nm IF=20mA D 1 1/2 Spectral Line Half-width Super Bright Orange 29 nm IF=20mA C Capacitance Super Bright Orange 30 pF VF=0V f=1MHz VF 2 Forward Voltage Super Bright Orange 2.0 2.5 V IF=20mA IR Reverse Current Super Bright Orange 10 uA VR = 5V Notes: 1.Wavelength: +/-1nm. 2. Forward Voltage: +/-0.1V. Absolute Maximum Ratings at TA=25C Parameter Super Bright Orange Units Power dissipation 75 mW Forward Current 30 mA Peak Forward Current 1 195 mA Reverse Voltage 5 V Operating / Storage Temperature -40C To +85C Note: 1. 1/10 Duty Cycle, 0.1ms Pulse Width. SPEC NO: DSAD0927 REV NO: V.5 DATE: MAR/25/2006 PAGE: 2 OF 5 APPROVED: J. Lu CHECKED: Allen Liu DRAWN: H.Q.YUAN ERP:1203005345