APT2012PD1C

APT2012PD1C 2.0 x 1.25 mm Photodiode DESCRIPTION PACKAGE DIMENSIONS z Made with NPN silicon photodiode chips FEATURES z 2.0 mm x 1.25 mm SMD LED, 0.75 mm thickness z Mechanically and spectrally matched to infrared emitting LED lamp z Package: 2000 pcs / reel z Moisture sensitivity level: 3 z RoHS compliant APPLICATIONS z Infrared applied systems z Optoelectronic switches z Photodetector control circuits z Sensor technology RECOMMENDED SOLDERING PATTERN (units : mm tolerance : 0.1) Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is 0.1(0.004 ) unless otherwise noted. 3. The specifications, characteristics and technical data described in the datasheet are subject to change without prior notice. 4. The device has a single mounting surface. The device must be mounted according to the specifications. ABSOLUTE MAXIMUM RATINGS at T =25C A Parameter Maximum Ratings Units Power Dissipation 150 mW Operating Temperature -40 to +85 C Storage Temperature -40 to +85 C Note: 1. Relative humidity levels maintained between 40% and 60% in production area are recommended to avoid the build-up of static electricity Ref JEDEC/JESD625-A and JEDEC/J-STD-033. Page 1 / 3 2018 Kingbright. All Rights Reserved. Spec No: DSAA8348 / 1203001836 Rev No: V.6 Date: 08/09/2018 APT2012PD1C ELECTRICAL / OPTICAL CHARACTERISTICS at T =25C A Parameter Symbol Min. Typ. Max. Units Test Conditions I = 100uA R Reverse Break down Voltage V 33 170 - V 2 (BR)R H = 0mW/cm V = 10V R Reverse Dark Current ID - - 10 nA (R) 2 H = 0mW/cm = 940nm Open Circuit Voltage V - 390 - mV OC 2 H = 5mW/cm Rise Time T - 6 - nS R V = 10V R = 940nm R = 1000 L Fall Time T - 6 - nS F V = 5V R 2 Light current I 4 8 - uA Ee = 0.08mW/cm S = 940nm V = 10V R Total Capacitance C - 5 - pF F = 1MHZ T 2 H = 0mW/cm Range of spectral bandwidth 420 - 1120 nm - 0.1 Wavelength of peak sensitivity - 940 - nm - p Angle of half sensitivity 21/2 - 160 - deg - TECHNICAL DATA RELATIVE SPECTRAL SENSITIVITY vs. WAVELENGTH RELATIVE RADIANT SENSITIVITY vs. ANGULAR DISPLACEMENT 100% 0 -15 15 T = 25 C a T = 25 C a -30 30 80% -45 45 60% 60 -60 40% 20% 75 -75 0% 350 450 550 650 750 850 950 1050 1150 -90 90 Wavelength (nm) 1.0 0.5 0.0 0.5 1.0 PHOTODIODE Light Current vs. Power Dissipation vs. Dark Current vs. Dark Current vs. Irradiance Ambient Temperature Reverse Voltage Ambient Temperature 1000 200 10 1000 VCE = 20V V =5V R T = 25 C a Ee = 0 T = 25 C a 100 150 100 1 10 100 10 0.1 1 50 1 0.1 0 0.01 0.1 1 10 100 1000 10000 0 20406080 100 0 5 10 15 20 25 30 025 50 75 100 2 Ambient temperature (C) Ambient temperature (C) Irradiance Ee (W/cm ) Reverse voltage V (V) R Page 2 / 3 2018 Kingbright. All Rights Reserved. Spec No: DSAA8348 / 1203001836 Rev No: V.6 Date: 08/09/2018 Relative spectral sensitivity (a. u.) Light current Is (A) Power dissipation Pd (mW ) Dark current (nA) Relative sensitivity Dark current (nA)