SC10-21SEKWA

25.4mm (1.0 INCH) SINGLE DIGIT NUMERIC DISPLAY Part Number: SC10-21SEKWA Super Bright Orange Features Description z 1.02 inch digit height. The Super Bright Orange device is made with AlGaInP (on z Low current operation. GaAs substrate) light emitting diode chip. z Excellent character appearance. z High light output. z Easy mounting on P.C. boards or sockets. z Mechanically rugged. z Standard : gray face, white segment. z RoHS compliant. Package Dimensions& Internal Circuit Diagram Notes: 1. All dimensions are in millimeters (inches), Tolerance is 0.25(0.01 )unless otherwise noted. 2. The specifications, characteristics and technical data described in the datasheet are subject to change without prior notice. SPEC NO: DSAK2732 REV NO: V.5A DATE: JUN/27/2016 PAGE: 1 OF 7 APPROVED: Wynec CHECKED: Joe Lee DRAWN: L.T.Zhang ERP: 1301003068 KingbrightSelection Guide Iv (ucd) 1 10mA Part No. Emitting Color (Material) Lens Type Description Min. Typ. 150000 440000 Common Cathode, Rt. SC10-21SEKWA Super Bright Orange (AlGaInP) White Diffused Hand Decimal *52000 *150000 Note: 1. Luminous intensity/ luminous Flux: +/-15%. * Luminous intensity value is traceable to CIE127-2007 standards Electrical / Optical Characteristics at TA=25C Symbol Parameter Emitting Color Typ. Max. Units Test Conditions peak Peak Wavelength Super Bright Orange 610 nm IF=10mA D 1 Dominant Wavelength Super Bright Orange 601 nm IF=10mA 1/2 Spectral Line Half-width Super Bright Orange 29 nm IF=10mA C Capacitance Super Bright Orange 15 pF VF=0V f=1MHz Forward Voltage 4.0 5.0 VF 2 Super Bright Orange V IF=10mA (DP) (2.0) (2.5) Reverse Current VR=5V IR Super Bright Orange 10 uA (Per Chip) (VR=5V) Notes: 1. Wavelength: +/-1nm. 2. Forward Voltage: +/-0.1V. 3. Wavelength value is traceable to CIE127-2007 standards. 4. Excess driving current and / or operating temperature higher than recommended conditions may result in severe light degradation or premature failure. Absolute Maximum Ratings at TA=25C Parameter Values Units Power dissipation 75 mW (Per Chip) DC Forward Current 30 mA (DP) (30) Peak Forward Current 1 195 mA (DP) (195) Reverse Voltage 5 V (Per Chip) Operating / Storage Temperature -40C To +85C Lead Solder Temperature 2 260C For 3-5 Seconds Notes: 1. 1/10 Duty Cycle, 0.1ms Pulse Width. 2. 2mm below package base. 3. Relative humidity levels maintained between 40% and 60% in production area are recommended to avoid the build-up of static electricity Ref JEDEC/JESD625-A and JEDEC/J-STD-033. SPEC NO: DSAK2732 REV NO: V.5A DATE: JUN/27/2016 PAGE: 2 OF 7 APPROVED: Wynec CHECKED: Joe Lee DRAWN: L.T.Zhang ERP: 1301003068 Kingbright