WP710A10SF4BT-P22 T-1 (3mm) Infrared Emitting Diode DESCRIPTION PACKAGE DIMENSIONS SF4 Made with Gallium Aluminum Arsenide Infrared Emitting diodes FEATURES Mechanically and spectrally matched to the Phototransistor Blue transparent lens RoHS compliant APPLICATIONS Infrared Illumination for cameras Machine vision systems Surveillance systems Industrial electronics IR data transmission Remote control Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is 0.25(0.01 ) unless otherwise noted. 3. Lead spacing is measured where the leads emerge from the package. 4. The specifications, characteristics and technical data described in the datasheet are subject to change without prior notice. SELECTION GUIDE 2 1 Po (mW/sr) 20mA Viewing Angle Emitting Color Part Number Lens Type (Material) Min. Typ. 21/2 WP710A10SF4BT-P22 Infrared (GaAlAs) Blue Transparent 7 12 30 Notes: 1. 1/2 is the angle from optical centerline where the luminous intensity is 1/2 of the optical peak value. 2. Radiant Intensity / luminous flux: +/-15%. 3. Radiant intensity value is traceable to CIE127-2007 standards. Page 1 / 5 2020 Kingbright. All Rights Reserved. Spec No: DSAO8743 / 1101031108 Rev No: V.5B Date: 05/29/2020 ConfidentialWP710A10SF4BT-P22 ELECTRICAL / OPTICAL CHARACTERISTICS at T =25C A Value Parameter Symbol Emitting Color Unit Typ. Max. Wavelength at Peak Emission I = 20mA Infrared 880 - nm F peak Spectral Bandwidth at 50% REL MAX Infrared 50 - nm I = 20mA F Capacitance C Infrared 90 - pF 1 Forward Voltage I = 20mA V Infrared 1.3 1.6 V F F Reverse Current (V = 5V) I Infrared - 10 A R R Temperature Coefficient of Wavelength TC Infrared 0.3 - nm/C I = 20mA, -10C T 85C F Temperature Coefficient of V F TC Infrared -1.3 - mV/C V I = 20mA, -10C T 85C F Notes: 1. Forward voltage: 0.1V. 2. Wavelength value is traceable to CIE127-2007 standards. 3. Excess driving current and / or operating temperature higher than recommended conditions may result in severe light degradation or premature failure. ABSOLUTE MAXIMUM RATINGS at T =25C A Parameter Symbol Value Unit Power Dissipation P 85 mW D Reverse Voltage V 5 V R Junction Temperature T 125 C j Operating Temperature T -40 to +85 C op Storage Temperature T -40 to +85 C stg DC Forward Current I 50 mA F 1 Peak Forward Current I 1.2 A FM Electrostatic Discharge Threshold (HBM) 8000 V - 2 Thermal Resistance (Junction / Ambient) R 530 C/W th JA 2 Thermal Resistance (Junction / Solder point) R 310 C/W th JS 3 Lead Solder Temperature 260C For 3 Seconds 4 Lead Solder Temperature 260C For 5 Seconds Notes: 1. 1/100 Duty Cycle, 10s Pulse Width. 2 2. R ,R Results from mounting on PC board FR4 (pad size 16 mm per pad). th JA th JS 3. 2mm below package base. 4. 5mm below package base. 5. Relative humidity levels maintained between 40% and 60% in production area are recommended to avoid the build-up of static electricity Ref JEDEC/JESD625-A and JEDEC/J-STD-033. Page 2 / 5 2020 Kingbright. All Rights Reserved. Spec No: DSAO8743 / 1101031108 Rev No: V.5B Date: 05/29/2020 Confidential