Memory Module Speci cations KVR16LSE11/4HB 4GB 1Rx8 512M x 72-Bit PC3L-12800 CL11 204-Pin ECC SODIMM DESCRIPTION SPECIFICATIONS This document describes ValueRAM s 512M x 72-bit (4GB) CL(IDD) 11 cycles DDR3L-1600 CL11 SDRAM (Synchronous DRAM), 1Rx8, ECC, Row Cycle Time (tRCmin) 48.125ns (min.) low voltage, memory module, based on nine 512M x 8-bit FBGA Refresh to Active/Refresh 260ns (min.) components. The SPD is programmed to JEDEC standard Command Time (tRFCmin) latency DDR3-1600 timing of 11-11-11 at 1.35V and backwards Row Active Time (tRASmin) 35ns (min.) compatible at 1.5V. This 204-pin SODIMM uses gold contact Maximum Operating Power (1.35V) = 1.46 W* fingers. The electrical and mechanical specifications are as UL Rating 94 V - 0 follows: o o Operating Temperature 0 C to 85 C o o Storage Temperature -55 C to +100 C FEATURES *Power will vary depending on the SDRAM. JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V) Power Supply VDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V) SDRAM SUPPORTED 800MHz fCK for 1600Mb/sec/pin Hynix (B-Die) 8 independent internal bank Programmable CAS Latency: 5, 6, 7, 8, 9, 10, 11 Programmable Additive Latency: 0, CL - 2, or CL - 1 clock 8-bit pre-fetch Burst Length: 8 (Interleave without any limit, sequential with starting address 000 only), 4 with tCCD = 4 which does not allow seamless read or write either on the fly using A12 or MRS Bi-directional Differential Data Strobe With Integrated onboard Temperature Sensor EEPROM Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm 1%) On Die Termination using ODT pin Average Refresh Period 7.8us at lower than TCASE 85C, 3.9us at 85C < TCASE < 95C Asynchronous Reset PCB: Height 1.18 (30mm), double sided component Continued >> Document No. VALUERAM1463-001.A00 04/01/15 Page 1Document No. VALUERAM1463-001.A00 Page 2