Product Information

TC58BVG0S3HBAI6

TC58BVG0S3HBAI6 electronic component of Kioxia America

Datasheet
1Gbit, generation: 24nm, ECC logic on the chip, VCC=2.7 to 3.6V
Manufacturer: Kioxia America
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

338: USD 2.6469 ea
Line Total: USD 894.65

0 - Global Stock
MOQ: 338  Multiples: 338
Pack Size: 338

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - Warehouse 1


Ships to you between Tue. 07 May to Mon. 13 May

MOQ : 338
Multiples : 338

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TC58BVG0S3HBAI6
Kioxia America

338 : USD 2.6469
340 : USD 2.4108
680 : USD 2.2804
1700 : USD 2.1501
3400 : USD 2.0198
17000 : USD 1.8895
34000 : USD 1.7592

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Memory Size
Interface Type
Organisation
Data Bus Width
Supply Voltage - Min
Supply Voltage - Max
Supply Current - Max
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Memory Type
Brand
Maximum Clock Frequency
Moisture Sensitive
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Factory Pack Quantity :
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Additional Infomation About Product

TC58BVG0S3HBAI6 MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1 GBIT (128M 8 BIT) CMOS NAND E PROM DESCRIPTION The TC58BVG0S3HBAI6 is a single 3.3V 1Gbit (1,107,296,256 bits) NAND Electrically Erasable and 2 Programmable Read-Only Memory (NAND E PROM) organized as (2048 + 64) bytes 64 pages 1024 blocks. The device has a 2112-byte static register which allows program and read data to be transferred between the register and the memory cell array in 2112-bytes increments. The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: 2112 bytes 64 pages). The TC58BVG0S3HBAI6 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage. The TC58BVG0S3HBAI6 has ECC logic on the chip and 8bit read errors for each 528Bytes can be corrected internally. FEATURES Organization x8 Memory cell array 2112 64K 8 Register 2112 8 Page size 2112 bytes Block size (128K + 4K) bytes Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, ECC Status Read Mode control Serial input/output Command control Number of valid blocks Min 1004 blocks Max 1024 blocks Power supply VCC = 2.7V to 3.6V Access time Cell array to register 40 s typ. Read Cycle Time 25 ns min (C =50pF) L Program/Erase time Auto Page Program 330 s/page typ. Auto Block Erase 2.5 ms/block typ. Operating current Read (25 ns cycle) 30 mA max Program (avg.) 30 mA max Erase (avg.) 30 mA max Standby 50 A max Package P-VFBGA67-0608-0.80-001 (Weight: 0.095 g typ.) 8bit ECC for each 528Bytes is implemented on a chip. 2012-2018 Toshiba Memory Corporation 2018-06-01C 1 TC58BVG0S3HBAI6 PIN ASSIGNMENT (TOP VIEW) 1 2 3 4 5 6 7 8 A NC NC NC NC NC B NC WP ALE V WE RY/BY NC SS CE C NC NC CLE NC NC NC NC RE D NC NC NC NC NC NC E NC NC NC NC NC NC F NC NC NC NC NC NC G NC I/O1 NC NC NC V CC H NC NC I/O2 NC V I/O6 I/O8 NC CC J NC V I/O3 I/O4 I/O5 I/O7 V NC SS SS K NC NC NC NC NC NC PIN NAMES I/O1 to I/O8 I/O port Chip enable CE WE Write enable RE Read enable CLE Command latch enable ALE Address latch enable WP Write protect RY/BY Ready/Busy VCC Power supply V Ground SS NC No Connection 2012-2018 Toshiba Memory Corporation 2018-06-01C 2

HS Compliance

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)

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