Product Information

TC58BVG2S0HBAI6

TC58BVG2S0HBAI6 electronic component of Kioxia America

Datasheet
NAND Flash 4Gb SLC BENAND 24nm I Temp BGA EEPROM 4K Page
Manufacturer: Kioxia America
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 7.0605 ea
Line Total: USD 7.06

327 - Global Stock
Ships to you between
Mon. 13 May to Wed. 15 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
325 - Warehouse 1


Ships to you between Mon. 13 May to Wed. 15 May

MOQ : 1
Multiples : 1

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TC58BVG2S0HBAI6
Kioxia America

1 : USD 5.037
10 : USD 4.623
100 : USD 4.1515
250 : USD 4.14
338 : USD 3.979
1014 : USD 3.841
2704 : USD 3.657
5070 : USD 3.5535
10140 : USD 3.427

Read More Specifications

     
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Additional Infomation About Product

TC58BVG2S0HBAI6 MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT (512M 8 BIT) CMOS NAND E PROM DESCRIPTION The TC58BVG2S0HBAI6 is a single 3.3V 4Gbit (4,429,185,024 bits) NAND Electrically Erasable and 2 Programmable Read-Only Memory (NAND E PROM) organized as (4096 128) bytes 64 pages 2048 blocks. The device has a 4224-byte static register which allows program and read data to be transferred between the register and the memory cell array in 4224-bytes increments. The Erase operation is implemented in a single block unit (256 Kbytes 8 Kbytes: 4224 bytes 64 pages). The TC58BVG2S0HBAI6 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed, making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage. The TC58BVG2S0HBAI6 has ECC logic on the chip and 8bit read errors for each 528Bytes can be corrected internally. FEATURES Organization x8 Memory cell array 4224 128K 8 Register 4224 8 Page size 4224 bytes Block size (256K 8K) bytes Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Read, Multi Page Program, Multi Block Erase, ECC Status Read Mode control Serial input/output Command control Number of valid blocks Min 2008 blocks Max 2048 blocks Power supply VCC 2.7V to 3.6V Access time Cell array to register 55 s typ. (Single Page Read) / 90 s typ. (Multi Page Read) Read Cycle Time 25 ns min (C =50pF) L Program/Erase time Auto Page Program 340 s/page typ. Auto Block Erase 2.5 ms/block typ. Operating current Read (25 ns cycle) 30 mA max Program (avg.) 30 mA max Erase (avg.) 30 mA max Standby 50 A max Package P-VFBGA67-0608-0.80-001 (Weight: 0.095 g typ.) 8bit ECC for each 528Byte is implemented on the chip. 2013-2019 KIOXIA Corporation 2019-10-01C 1 TC58BVG2S0HBAI6 PIN ASSIGNMENT (TOP VIEW) 1 2 3 4 5 6 7 8 A NC NC NC NC NC -------- -------- -------- -------- B NC WP ALE V CE WE RY/BY NC SS -------- C NC NC RE CLE NC NC NC NC D NC NC NC NC NC NC E NC NC NC NC NC NC F NC NC NC NC NC NC G NC I/O1 NC NC NC V CC H NC NC I/O2 NC V I/O6 I/O8 NC CC J NC V I/O3 I/O4 I/O5 I/O7 V NC SS SS K NC NC NC NC NC NC PIN NAMES I/O1 to I/O8 I/O port -------- CE Chip enable -------- WE Write enable -------- RE Read enable CLE Command latch enable ALE Address latch enable -------- WP Write protect -------- RY / BY Ready/Busy V Power supply CC V Ground SS NC No Connection 2013-2019 KIOXIA Corporation 2019-10-01C 2

HS Compliance

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)

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